VS-MBRB3045CTTRRP Vishay Semiconductors, VS-MBRB3045CTTRRP Datasheet - Page 3

• Manufacturer Part Number: VS-MBRB3045CTTRRP
• Description: Schottky Diodes & Rectifiers 30 Amp 45 Volt Common Cathode
• Manufacturer: Vishay Semiconductors

Specifications of VS-MBRB3045CTTRRP

• Product Category: Schottky Diodes & Rectifiers
• Rohs: yes
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 30 A
• Max Surge Current: 1020 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.76 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK (TO-263AB)
• Factory Pack Quantity: 800

RATINGS AND CHARACTERISTICS CURVES
(T
Revision: 27-Jun-12
A
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
= 25 °C unless otherwise noted)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.01
100
300
250
200
150
100
Fig. 3 - Typical Instantaneous Forward Characteristics
1.0
0.1
30
18
10
24
12
50
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6
0
0
1
0
0
Fig. 1 - Forward Current Derating Curve
0.1
Resistive or Inductive Load
Instantaneous Forward Voltage (V)
T
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0.2
J
= 150 °C
Number of Cycles at 60 Hz
Case Temperature (°C)
0.3
50
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.4
Per Diode
Per Diode
T
8.3 ms Single Half Sine-Wave
J
0.5
T
= T
10
J
= 25 °C
J
Max.
0.6
100
0.7
0.8
0.9
150
100
1.0
MBR(F,B)3035CT, MBR(F,B)3045CT
3
10 000
0.001
1000
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0.01
100
100
100
1.0
0.1
0.1
10
10
Fig. 4 - Typical Reverse Characteristics Per Diode
1
0.01
0.1
Fig. 5 - Typical Junction Capacitance Per Diode
0
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Percent of Rated Peak Reverse Voltage (%)
20
0.1
T
J
t - Pulse Duration (s)
= 125 °C
Reverse Voltage (V)
1
T
40
J
= 75 °C
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T
1
J
= 25 °C
60
10
Document Number: 88677
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
80
100
100
100