VS-MBRB1045TRRPBF Vishay Semiconductors, VS-MBRB1045TRRPBF Datasheet - Page 3

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VS-MBRB1045TRRPBF

Manufacturer Part Number
VS-MBRB1045TRRPBF
Description
Schottky Diodes & Rectifiers 10 Amp 45 Volt Common Cathode
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-MBRB1045TRRPBF

Product Category
Schottky Diodes & Rectifiers
Rohs
yes
Product
Schottky Rectifiers
Peak Reverse Voltage
45 V
Forward Continuous Current
10 A
Max Surge Current
150 A
Configuration
Single Dual Cathode
Forward Voltage Drop
0.84 V at 20 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK (TO-263AB)
Factory Pack Quantity
800
RATINGS AND CHARACTERISTICS CURVES
(T
Revision: 13-Jun-12
A
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
= 25 °C unless otherwise noted)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.01
175
150
125
100
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
12
10
75
50
25
10
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
8
6
4
2
0
1
0.1
0
0
T
Fig. 1 - Forward Current Derating Curve
J
= 150 °C
0.2
Instantaneous Forward Voltage (V)
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MBR1035 - MBR1045
MBR1050 - MBR1060
Number of Cycles at 60 Hz
Case Temperature (°C)
0.4
50
1
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
T
J
= 25 °C
T
8.3 ms Single Half Sine-Wave
J
Resistive or Inductive Load
0.6
= T
J
MBR1035 - MBR1045
MBR1050 - MBR1060
Max.
Pulse Width = 300 µs
1 % Duty Cycle
100
10
0.8
1.0
150
100
1.2
3
MBR(F,B)1035 thru MBR(F,B)1060
10 000
0.001
1000
0.01
100
100
100
0.1
0.1
10
10
1
1
0.01
0.1
0
Fig. 6 - Typical Transient Thermal Impedance
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Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
MBR1035 - MBR1045
MBR1050 - MBR1060
20
MBR1035 - MBR1045
MBR1050 - MBR1060
0.1
T
J
t - Pulse Duration (s)
= 125 °C
Reverse Voltage (V)
1
40
T
DiodesEurope@vishay.com
J
1
= 75 °C
60
10
Document Number: 88669
T
f = 1.0 MHz
V
T
J
sig
J
= 25 °C
10
= 25 °C
= 50 mVp-p
80
100
100
100

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