VS-HFA08TA60CSTRRP Vishay Semiconductors, VS-HFA08TA60CSTRRP Datasheet - Page 2
VS-HFA08TA60CSTRRP
Manufacturer Part Number
VS-HFA08TA60CSTRRP
Description
Rectifiers 600 Volt 8.0 Amp Common Cathode
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-HFA08TA60CSTRRP.pdf
(8 pages)
Specifications of VS-HFA08TA60CSTRRP
Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Dual Common Cathode
Reverse Voltage
600 V
Forward Voltage Drop
1.8 V
Recovery Time
42 ns
Forward Continuous Current
4 A
Max Surge Current
25 A
Reverse Current Ir
3 uA
Mounting Style
SMD/SMT
Package / Case
D2PAK
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
800
Revision: 27-Aug-12
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
Maximum reverse
leakage current
Junction capacitance
Series inductance
DYNAMIC RECOVERY CHARACTERISTICS (T
PARAMETER
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
Peak rate of fall of recovery
current during t
See fig. 11 and 12
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Weight
Mounting torque
Marking device
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
b
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
dI
dI
SYMBOL
SYMBOL
SYMBOL
(rec)M
(rec)M
I
I
R
R
T
RRM1
RRM2
V
Q
Q
V
I
t
t
C
thJC
RM
L
t
lead
thJA
rr1
rr2
FM
BR
rr
rr1
rr2
S
T
/dt1
/dt2
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Case style D
J
I
I
I
I
V
T
V
Measured lead to lead 5 mm from package body
I
T
T
T
T
T
T
T
T
F
R
F
F
F
J
J
J
J
J
J
J
J
J
R
R
= 25 °C unless otherwise specified)
= 4.0 A
= 8.0 A
= 4.0 A, T
= 1.0 A, dI
= 100 μA
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C, V
= V
= 200 V
R
rated
J
F
2
= 125 °C
/dt = 200 A/μs, V
TEST CONDITIONS
PAK
TEST CONDITIONS
TEST CONDITIONS
R
J
= 0.8 x V
= 25 °C unless otherwise specified)
2
R
I
dI
V
F
rated
R
F
= 4.0 A
/dt = 200 A/μs
= 200 V
R
= 30 V
www.vishay.com/doc?91000
See fig. 1
See fig. 2
See fig. 3
VS-HFA06TB120SPbF
Vishay Semiconductors
MIN.
MIN.
MIN.
(5.0)
600
6.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DiodesEurope@vishay.com
TYP.
TYP.
TYP.
HFA08TA60CS
0.07
0.17
280
235
1.5
1.8
1.4
4.0
8.0
2.9
3.7
2.0
44
17
28
38
40
70
-
-
-
-
-
Document Number: 94596
MAX.
MAX.
MAX.
300
105
300
(10)
5.0
1.8
2.2
1.7
3.0
8.0
5.2
6.7
80
12
42
57
60
-
-
-
-
-
-
-
kgf · cm
(lbf · in)
UNITS
UNITS
UNITS
A/μs
K/W
oz.
μA
pF
nH
nC
ns
°C
V
A
g