VS-HFA04SD60STRRP Vishay Semiconductors, VS-HFA04SD60STRRP Datasheet

VS-HFA04SD60STRRP

Manufacturer Part Number

VS-HFA04SD60STRRP

Description

Rectifiers 600 Volt 4.0 Amp

Manufacturer

Vishay Semiconductors

Datasheet

1.VS-HFA04SD60STRPBF.pdf (8 pages)

Specifications of VS-HFA04SD60STRRP

Product Category

Rectifiers

Rohs

yes

Product

Ultra Fast Recovery Rectifiers

Configuration

Single

Reverse Voltage

600 V

Forward Voltage Drop

2.2 V at 8 A

Recovery Time

42 ns

Forward Continuous Current

4 A

Max Surge Current

25 A

Reverse Current Ir

3 uA

Mounting Style

SMD/SMT

Package / Case

DPAK

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Factory Pack Quantity

3000

Current page: 1 of 8
Download datasheet (144Kb)

Revision: 14-Jun-11

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Cathode to anode voltage

Maximum continuous forward current

Single pulse forward current

Repetitive peak forward current

Maximum power dissipation

Operating junction and storage temperatures

ELECTRICAL SPECIFICATIONS (T

PARAMETER

Breakdown voltage,

blocking voltage

Forward voltage

See fig. 1

Maximum reverse

leakage current

Junction capacitance

Series inductance

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

D-PAK (TO-252AA)

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,

Diode variation

Package

F(AV)

max.

typ.

at I

www.vishay.com

HEXFRED

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

SYMBOL

D-PAK (TO-252AA)

N/C

Measured lead to lead 5 mm from package body

Single die

150 °C

= 4 A

= 8 A

= 4 A, T

Ultrafast Soft Recovery Diode, 4 A

= 100 μA

600 V

17 ns

1.8 V

= 125 °C, V

= V

= 200 V

4 A

2, 4

= 25 °C unless otherwise specified)

Anode

rated

SYMBOL

= 125 °C

TEST CONDITIONS

F(AV)

FSM

FRM

, T

RRM

= 0.8 x V

Stg

rated

TEST CONDITIONS

= 100 °C

= 116 °C

= 100 °C

FEATURES

• Ultrafast recovery time

• Ultrasoft recovery

• Very low I

• Very low Q

• Guaranteed avalanche

• Specified at operating temperature

• Compliant to RoHS Directive 2002/95/EC

• Meets MSL level 1, per J-STD-020, LF maximum peak of

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION/APPLICATIONS

These diodes are optimized to reduce losses and EMI/RFI

in high frequency power conditioning systems. The softness

of the recovery eliminates the need for a snubber in

most applications. These devices are ideally suited for

freewheeling, flyback, power converters, motor drives, and

other applications where high speed and reduced switching

losses are design requirements.

260 °C

www.vishay.com/doc?91000

RRM

MIN.

VS-HFA04SD60SPbF

600

Vishay Semiconductors

- 55 to 150

VALUES

DiodesEurope@vishay.com

600

TYP.

0.17

1.5

1.8

1.4

8.0

Document Number: 94034

MAX.

300

1.8

2.2

1.7

3.0

UNITS

°C

UNITS

μA

Related parts for VS-HFA04SD60STRRP

VS-HFA04SD60STRRP Summary of contents

Page 1

... 125 ° rated 125 ° 0 rated 200 V R Measured lead to lead 5 mm from package body 1 www.vishay.com/doc?91000 VS-HFA04SD60SPbF Vishay Semiconductors rr VALUES UNITS 600 150 °C MIN. TYP. MAX. UNITS 600 - - - 1 ...

Page 2

... 125 ° /dt = 200 A/μ ° 200 125 ° ° 125 °C J TEST CONDITIONS Typical socket mount Case style D-PAK 2 www.vishay.com/doc?91000 VS-HFA04SD60SPbF Vishay Semiconductors MIN. TYP. MAX. UNITS - 2.9 5 3.7 6 105 ...

Page 3

... J 0 Forward Voltage Drop (V) F Fig Typical Forward Voltage Drop Characteristics Fig Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 Fig Maximum Thermal Impedance Z Revision: 14-Jun-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE ...

Page 4

... 200 125 ° ° 100 dI /dt (A/µs) F Fig Typical Reverse Recovery Time vs 200 125 ° ° 100 dI /dt (A/µs) F Fig ...

Page 5

... F ( area under curve defined and I RRM Q (5) dI /dt - peak rate of change of (rec)M current during t and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions 5 www.vishay.com/doc?91000 VS-HFA04SD60SPbF Vishay Semiconductors ( RRM (5) / RRM = rr 2 portion Document Number: 94034 DiodesEurope@vishay ...

Page 6

... Voltage rating (60 = 600 D-PAK TR = Tape and reel TRR = Tape and reel (right oriented) TRL = Tape and reel (left oriented) PbF = Lead (Pb)-free P = Lead (Pb)-free (for TRR and TRL) LINKS TO RELATED DOCUMENTS 6 www.vishay.com/doc?91000 VS-HFA04SD60SPbF Vishay Semiconductors TR PbF 8 9 www.vishay.com/doc?95016 www.vishay.com/doc?95059 www.vishay.com/doc?95033 Document Number: 94034 ...

Page 7

... H 0.035 L 0.045 L1 0.215 3 L2 0.024 L3 0.035 L4 0.245 Ø 0.265 5 Ø Ø2 1 Outline Dimensions Vishay Semiconductors Pad layout 0.265 MIN. (6.74 0.488 (12.40) 0.409 (10.40 0.06 MIN. (1.524) 0.093 (2.38) 0.085 (2.18) H (7) C Seating plane MILLIMETERS INCHES MIN. MAX. MIN. MAX. 2.29 BSC 0.090 BSC 9 ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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