VS-HFA25TB60SPBF Vishay Semiconductors, VS-HFA25TB60SPBF Datasheet - Page 2
VS-HFA25TB60SPBF
Manufacturer Part Number
VS-HFA25TB60SPBF
Description
Rectifiers 600 Volt 25 Amp
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-HFA25TB60STRLP.pdf
(8 pages)
Specifications of VS-HFA25TB60SPBF
Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.7 V
Recovery Time
75 ns
Forward Continuous Current
25 A
Max Surge Current
225 A
Reverse Current Ir
20 uA
Mounting Style
SMD/SMT
Package / Case
D2PAK
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
1000
Revision: 27-Aug-12
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
Maximum reverse
leakage current
Junction capacitance
Series inductance
DYNAMIC RECOVERY CHARACTERISTICS (T
PARAMETER
Reverse recovery time
See fig. 5
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall recovery
current during t
See fig. 8
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Weight
Marking device
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
b
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
dI
dI
SYMBOL
SYMBOL
SYMBOL
(rec)M
(rec)M
I
I
R
R
T
V
RRM1
RRM2
V
Q
Q
I
C
t
t
RM
L
thJC
t
lead
thJA
FM
rr1
rr2
BR
rr
rr1
rr2
S
T
/dt1
/dt2
J
I
I
I
I
V
T
V
Measured lead to lead 5 mm from package body
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Case style D
I
T
T
T
T
T
T
T
T
R
F
F
F
F
J
R
R
J
J
J
J
J
J
J
J
= 25 °C unless otherwise specified)
= 25 A
= 50 A
= 25 A, T
= 100 μA
= 1.0 A, dI
= 125 °C, V
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= V
= 200 V
R
rated
J
= 125 °C
F
2
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
/dt = 200 A/μs, V
PAK
R
J
= 0.8 x V
= 25 °C unless otherwise specified)
2
R
I
dI
V
F
rated
R
F
= 25 A
/dt = 200 A/μs
= 200 V
R
= 30 V
www.vishay.com/doc?91000
See fig. 1
See fig. 2
See fig. 3
VS-HFA25TB60SPbF
Vishay Semiconductors
MIN.
MIN.
MIN.
600
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DiodesEurope@vishay.com
TYP.
TYP.
TYP.
0.07
105
112
420
250
160
600
4.5
8.0
2.0
1.3
1.5
1.3
1.5
8.0
HFA25TB60S
55
23
50
-
-
-
-
Document Number: 94066
MAX.
MAX.
MAX.
2000
1200
100
160
375
300
1.7
2.0
1.7
1.0
20
75
10
15
80
-
-
-
-
-
-
-
UNITS
UNITS
UNITS
A/μs
K/W
oz.
μA
nH
nC
pF
ns
°C
V
A
g