S1MHE3/63T Vishay Semiconductors, S1MHE3/63T Datasheet - Page 3

• Manufacturer Part Number: S1MHE3/63T
• Description: Rectifiers 1.0 Amp 1000 Volt 30A IFSM @ 8.3ms
• Manufacturer: Vishay Semiconductors

Specifications of S1MHE3/63T

• Product Category: Rectifiers
• Rohs: yes
• Product: Standard Recovery Rectifiers
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 1.1 V
• Recovery Time: 1800 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Package / Case: SMA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 7500

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Revision: 11-Dec-12
0.001
0.01
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.1
10
10
For technical questions within your region: [e-mail], [e-mail],
1
1
Fig. 4 - Typical Reverse Leakage Characteristics
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V
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20
0.8
0.065 (1.65)
0.049 (1.25)
0.060 (1.52)
0.030 (0.76)
0.090 (2.29)
0.078 (1.98)
T
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
= 125 °C
40
T
1.2
T
J
J
T
= 25 °C
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
J
= 75 °C
60
DO-214AC (SMA)
1.6
0.194 (4.93)
0.177 (4.50)
0.157 (3.99)
0.208 (5.28)
80
Cathode Band
)
0.008 (0.203)
0 (0)
100
2.0
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
3
1000
100
0.066 (1.68)
100
10
10
0.060 (1.52)
1
1
MIN.
0.01
0.01
MIN.
Fig. 6 - Typical Transient Thermal Impedance
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Vishay General Semiconductor
Mounting Pad Layout
Fig. 5 - Typical Junction Capacitance
0.1
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
0.208 (5.28)
REF.
S1K, S1M
Units Mounted on
0.20" x 0.20" (5.0 mm x 5.0 mm)
x 0.5 Mil. Inches (0.013 mm)
Thick Copper Land Areas
[e-mail]
1
1
0.074 (1.88)
S1A thru S1M
MAX.
Document Number: 88711
S1A thru S1J
T
f = 1.0 MHz
V
J
sig
10
10
= 25 °C
= 50 mV
p-p
100
100