VS-GB50YF120N Vishay Semiconductors, VS-GB50YF120N Datasheet

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VS-GB50YF120N

Manufacturer Part Number
VS-GB50YF120N
Description
IGBT Modules 1200 Volt 50 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-GB50YF120N

Product Category
IGBT Modules
Rohs
yes
Product
IGBT Silicon Modules
Configuration
Quad
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
66 A
Maximum Operating Temperature
+ 150 C
Package / Case
ECONO2 4PAK
Maximum Gate Emitter Voltage
+/- 20 V
Mounting Style
Screw
Factory Pack Quantity
6
Revision: 21-Mar-13
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
See fig. C.T.5
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Maximum power dissipation (IGBT)
Maximum operating junction temperature
Storage temperature range
Isolation voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
I
V
C
CE(on)
at T
V
C
CES
(typical)
= 66 °C
www.vishay.com
ECONO2 4PACK
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
IGBT Fourpack Module, 50 A
1200 V
3.49 V
50 A
SYMBOL
V
V
T
V
I
I
I
P
CM
T
ISOL
CES
I
LM
FM
I
Stg
C
GE
F
D
J
T
T
T
T
T
T
C
C
C
C
C
C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
TEST CONDITIONS
1
FEATURES
• Square RBSOA
• HEXFRED
• Positive V
• Copper baseplate
• Low stray inductance design
• Speed 8 to 60 kHz
• Designed and qualified for industrial market
• Material categorization: For definitions of compliance
BENEFITS
• Benchmark efficiency for SMPS appreciation in particular
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink space saving
• PCB solderable terminals
• Low junction to case thermal resistance
please see
HF welding
www.vishay.com/doc?91000
CE(on)
®
www.vishay.com/doc?99912
low Q
temperature coefficient
rr
, low switching energy
Vishay Semiconductors
AC 2500 (min)
- 40 to + 125
MAX.
1200
± 20
DiodesEurope@vishay.com
150
150
150
330
180
150
66
44
40
25
GB50YF120N
Document Number: 93653
UNITS
°C
W
V
A
V
V

Related parts for VS-GB50YF120N

VS-GB50YF120N Summary of contents

Page 1

... ° ° ° Stg V ISOL 1 www.vishay.com/doc?91000 GB50YF120N Vishay Semiconductors , low switching energy rr temperature coefficient MAX. UNITS 1200 150 A 150 40 25 150 ± 330 W 180 150 ° 125 AC 2500 (min) V Document Number: 93653 DiodesEurope@vishay ...

Page 2

... ° 125 ° 600 ° 125 °C dI/ A/μ ° 125 ° www.vishay.com/doc?91000 GB50YF120N Vishay Semiconductors MIN. TYP. MAX. UNITS 1200 - - - 3.49 3.9 - 4.15 4 4.16 4.5 - 4.97 5.4 4.0 4.9 6 mV/° 250 μA = 125 °C - 600 ...

Page 3

... T (°C) C Fig Power Dissipation vs. Case Temperature Revision: 21-Mar-13 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SYMBOL MIN ...

Page 4

... GE Fig Typical V vs ° 75A 50A 25A (V) GE Fig Typical V vs 125 ° 25° 125° ( 500 μ Document Number: 93653 ...

Page 5

... I (A) C Fig Typical Energy Loss vs 125 ° 200 μ 600 Revision: 21-Mar-13 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH ...

Page 6

... Rectangular Pulse Duration (s) 1 SINGLE PULSE ( THERMAL RESPONSE ) 0.05 0.02 0.01 1E-005 0.0001 t , Rectangular Pulse Duration ( www.vishay.com/doc?91000 GB50YF120N Vishay Semiconductors typical value 100 200 300 400 500 Q , Total Gate Charge (nC) G Fig Typical Gate Charge vs 5 600 μ 0.001 Document Number: 93653 DiodesEurope@vishay.com ...

Page 7

... ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Diode clamp/ 1000 D.U. Fig Resistive Load Circuit 7 www.vishay.com/doc?91000 GB50YF120N Vishay Semiconductors Driver D + 900 D.U.T. Fig S.C. SOA Circuit D.U. D.U.T Driver R g Fig Switching Loss Circuit CC Document Number: 93653 DiodesEurope@vishay.com ...

Page 8

... Circuit configuration (Y = Fourpack) - Package indicator (F = ECONO2) - Voltage rating (120 = 1200 V) - Speed/type (N = Ultrafast with reduced diode, speed kHz LINKS TO RELATED DOCUMENTS 8 www.vishay.com/doc?91000 GB50YF120N Vishay Semiconductors QB3 QB4 23 24 www.vishay.com/doc?95539 Document Number: 93653 DiodesEurope@vishay.com ...

Page 9

... Detail R 3 Document Number: 95252 Revision: 29-Nov-07 ECONO2 4PAK Z Y 105 ± 0.1 34.29 34.29 30.48 30.48 26.67 22.86 22.86 19.05 19.05 11.43 11.43 7.62 7.62 3.81 4443 4140 38 373635 29282726 7.62 7.62 11.43 15.24 19.05 19.05 22.86 26.67 22.86 34.29 30.48 39.49 39.49 93 ± 0.15 107.8 ± 0.2 Z 2:1 0.5 0.6 0.8 ± 0. 0.2 For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors + 1.0 20.5 - 0 2:1 1 0.85 - 0.02 1.25 - 0.06 www.vishay.com 1 ...

Page 10

... THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH 105 ± 0.1 22.86 19.05 22.86 7.62 11.43 7.62 3. 11.43 19.05 15.24 22.86 19.05 26.67 39.49 39.49 93 ± 0.15 107.8 ± 0.2 1 www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors Ø Ø 4 20.5 Ø 2.6 - 0.5 Ø 2.2 7.5 - 0.3 Document Number: 95539 DiodesEurope@vishay.com ...

Page 11

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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