VS-70MT060WHTAPBF Vishay Semiconductors, VS-70MT060WHTAPBF Datasheet - Page 2

• Manufacturer Part Number: VS-70MT060WHTAPBF
• Description: IGBT Modules 600 Volt 70 Amp Warp2 Speed IGBT
• Manufacturer: Vishay Semiconductors

Specifications of VS-70MT060WHTAPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 100 A
• Maximum Operating Temperature: + 150 C
• Package / Case: MTP
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 105

Revision: 05-Jul-11
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Collector to emitter leaking current
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fail time
Turn-on delay time
Rise time
Turn-off delay time
Fail time
Input capacitance
Output capacitane
Reverse transfer capacitance
Reverse BIAS safe operating area
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SYMBOL
SYMBOL
V
RBSOA
V
V
For technical questions, contact:
(BR)CES
td
td
C
I
I
td
td
C
C
CE(on)
Q
Q
E
E
GE(th)
E
E
Q
E
E
CES
GES
t
t
t
t
oes
on
off
on
off
ies
res
ge
gc
ts
ts
on
r
off
f
on
r
off
f
g
J
J
= 25 °C unless otherwise specified)
= 25 °C unless otherwise specified)
I
V
V
R
I
Energy losses include tail and diode reverse
recovery, T
R
I
Energy losses include tail and diode reverse
recovery, T
R
I
Energy losses include tail and diode reverse
recovery
R
I
Energy losses include tail and diode reverse
recovery, T
V
V
f = 1.0 MHz
T
V
R
V
V
V
V
I
V
V
V
C
C
C
C
C
C
CC
GE
GE
CC
J
CC
GE
GE
GE
GE
GE
GE
GE
g
g
g
g
g
= 70 A
= 70 A, V
= 70 A, V
= 70 A, V
= 70 A, V
= 0.5 mA
= 150 °C, I
= 10 
= 10 
= 10 
= 10 
= 22 , V
= 15 V
= 0 V
= 0 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 0 V, I
= 0 V, I
= ± 20 V
= 480 V
= 30 V
= 400 V, V
J
J
J
C
C
C
CC
CC
CC
CC
= 25 °C
= 150 °C
= 150 °C
GE
TEST CONDITIONS
C
C
C
TEST CONDITIONS
= 500 μA
= 600 V
= 600 V, T
C
= 480 V, V
= 480 V, V
2
= 70 A
= 140 A
= 70 A, T
= 480 V, V
= 480 V, V
P
= 300 A
= + 15 V to 0 V
= 600 V
[e-mail]
J
J
= 150 °C
GE
GE
= 150 °C
GE
GE
= 15 V, L = 200 μH
= 15 V, L = 200 μH
= 15 V, L = 200 μH
= 15 V, L = 200 μH
www.vishay.com/doc?91000
Vishay Semiconductors
70MT060WHTAPbF
MIN.
MIN.
600
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
Document Number: 94469
TYP.
TYP.
8000
1.27
1.13
460
160
314
308
312
320
790
110
2.1
2.8
2.7
1.1
0.9
2.4
70
49
68
50
78
2
-
-
-
-
-
MAX.
± 250
MAX.
690
250
130
2.4
3.4
0.7
10
3
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
mA
nC
mJ
nA
pF
ns
V
V