VS-GB75YF120N Vishay Semiconductors, VS-GB75YF120N Datasheet - Page 5

• Manufacturer Part Number: VS-GB75YF120N
• Description: IGBT Modules 1200 Volt 75 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB75YF120N

• Product Category: IGBT Modules
• Product: IGBT Silicon Modules
• Configuration: Quad
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 100 A
• Maximum Operating Temperature: + 150 C
• Package / Case: ECONO2 4PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw

Revision: 21-Mar-13
T
J
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
= 125 °C; L = 200 μH; V
Fig. 11 - Typical Zero Gate Voltage Collector Current
For technical questions within your region: [e-mail], [e-mail],
0.001
0.01
5.5
4.5
3.5
2.5
0.1
5
4
3
2
1
9
8
7
6
5
4
3
2
1
0
400
0
20
Fig. 13 - Typical Energy Loss vs. I
Fig. 12 - Typical Threshold Voltage
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40
0.2
T J = 125°C
600
T J = 25°C
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
60
0.4
E OFF
CE
V
I
80
C
I
CES
C
800
= 600 V, R
T J = 25°C
(mA)
(A)
100
(V)
T J = 125°C
0.6
120
1000
G
E ON
0.8
= 5 ; V
140
C
1200
160
GE
1
= 15 V
5
T
J
= 125 °C; L = 200 μH; V
0.01
12
10
800
700
600
500
400
300
200
100
0.1
8
6
4
2
0
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0
1
0
20
Fig. 14 - Typical Switching Time vs. I
0
Fig. 15 - Typical Diode I
Fig. 16 - Typical Diode t
40
20
20
V
V
CC
CC
Vishay Semiconductors
60
= 600 V; I
= 600 V; I
dI
40
dI
40
F/
CE
F/
80
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t F
I
dt (A/µs)
dt (A/µs)
C
= 600 V, R
(A)
125°C
F
F
125°C
100
60
= 50 A
60
= 50 A
25°C
GB75YF120N
REC
rr
Document Number: 93654
vs. dI
td OFF
120
td ON
25°C
vs. dI
G
80
= 5 ; V
80
F
t R
140
F
/dt
/dt
C
100
100
GE
160
= 15 V