NGTB30N120IHSWG ON Semiconductor, NGTB30N120IHSWG Datasheet - Page 2

• Manufacturer Part Number: NGTB30N120IHSWG
• Description: IGBT Transistors 1200/30A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTIC
DYNAMIC CHARACTERISTIC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
DIODE CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
Gate to collector charge
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
Forward voltage
THERMAL CHARACTERISTICS
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Parameter
Rating
(T
J
= 25°C unless otherwise specified)
V
V
V
GE
V
CE
V
GE
CE
GE
= 0 V, V
= 600 V, I
V
= 15 V, I
= 20 V, V
V
V
V
V
= 0 V, I
V
GE
V
GE
V
GE
CC
CC
GE
GE
GE
Test Conditions
= 0 V, V
V
V
= V
= 0 V, I
= 600 V, I
= 600 V, I
= 20 V, V
GE
GE
http://onsemi.com
= 15 V, I
CE
T
= 0 V, I
R
R
T
F
J
C
CE
C
J
g
g
= 0 V/ 15V
= 0 V/ 15V
GE
= 125°C
= 30 A, T
= 1200 V, T
= 30 A, T
= 25°C
= 10 W
= 10 W
= 30 A, V
, I
CE
C
= 0 V, f = 1 MHz
C
F
C
= 500 mA
= 250 mA
CE
C
C
= 1200 V
= 30 A
= 30 A
2
= 30 A
= 30 A
= 0 V
J
J
GE
= 150°C
= 150°C
J =
= 15 V
Symbol
150°C
R
R
R
qJC
qJC
qJA
V
Symbol
V
V
(BR)CES
t
t
I
I
C
C
GE(th)
C
Q
Q
CEsat
d(off)
E
d(off)
E
CES
GES
Q
V
oes
t
t
ies
res
off
off
ge
gc
f
f
F
g
Value
0.65
1200
Min
2.0
4.5
40
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5300
Typ
125
220
210
140
215
175
2.0
2.6
5.5
1.0
1.8
1.8
2.0
95
42
95
−
−
−
−
Max
100
2.4
6.5
0.5
2.0
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
°C/W
°C/W
°C/W
Unit
Unit
mA
nC
mJ
mJ
nA
pF
ns
ns
V
V
V
V