NGTB30N120IHSWG ON Semiconductor, NGTB30N120IHSWG Datasheet - Page 4

• Manufacturer Part Number: NGTB30N120IHSWG
• Description: IGBT Transistors 1200/30A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

120
100
2.5
1.5
0.5
4.5
3.5
2.5
1.5
0.5
80
60
40
20
0
2
1
0
4
3
2
1
0
0
0
8
V
V
I
Rg = 10 W
V
V
T
Rg = 10 W
C
0.5
CE
GE
CE
GE
J
Figure 7. Diode Forward Characteristics
= 30 A
Figure 9. Energy Loss vs. Temperature
= 150°C
14
20
= 600 V
= 15 V
= 600 V
= 15 V
T
1.0
Figure 11. Energy Loss vs. I
J
20
, JUNCTION TEMPERATURE (°C)
I
40
C
V
, COLLECTOR CURRENT (A)
F
, FORWARD VOLTAGE (V)
1.5
26
60
2.0
T
J
32
= 25°C
2.5
80
38
3.0
100
44
T
3.5
J
TYPICAL CHARACTERISTICS
= 150°C
120
C
50
4.0
140
http://onsemi.com
4.5
56
160
5.0
62
4
1000
1000
100
100
20
15
10
10
10
5
0
1
1
8
0
0
V
V
I
Rg = 10 W
V
V
T
Rg = 10 W
C
Figure 10. Switching Time vs. Temperature
CE
GE
J
CE
GE
t
= 30 A
d(off)
t
= 150°C
14
f
20
= 600 V
= 15 V
= 600 V
= 15 V
t
Figure 12. Switching Time vs. I
T
50
d(off)
Figure 8. Typical Gate Charge
t
J
20
f
, JUNCTION TEMPERATURE (°C)
I
40
C
, COLLECTOR CURRENT (A)
Q
G
26
, GATE CHARGE (nC)
60
100
32
80
38
150
V
100
CE
44
= 600 V
120
50
200
C
140
56
250
160
62