NGTB30N120IHSWG ON Semiconductor, NGTB30N120IHSWG Datasheet - Page 5

• Manufacturer Part Number: NGTB30N120IHSWG
• Description: IGBT Transistors 1200/30A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

1000
0.01
100
3.2
2.8
2.4
1.6
1.2
0.8
0.4
2.8
2.4
1.6
1.2
0.8
0.4
0.1
10
2
0
1
2
0
1
5
375
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
425
15
V
V
CE
CE
dc operation
C
Figure 15. Energy Loss vs. V
Figure 17. Safe Operating Area
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Energy Loss vs. Rg
= 25°C
475
25
10
Rg, GATE RESISTOR (W)
35
525
1 ms
45
575
100
55
625
50 ms
100 ms
V
V
I
T
TYPICAL CHARACTERISTICS
C
J
CE
GE
65
V
I
Rg = 10 W
T
675
= 30 A
C
= 150°C
J
GE
CE
= 30 A
= 600 V
= 15 V
= 150°C
= 15 V
1000
75
http://onsemi.com
725
775
85
5
1000
10000
100
1000
1000
10
100
100
1
10
10
1
1
1
375
V
5
Figure 18. Reverse Bias Safe Operating Area
GE
V
V
I
T
V
I
Rg = 10 W
T
C
C
J
CE
GE
GE
J
= 15 V, T
= 30 A
V
= 150°C
= 30 A
= 150°C
425
CE
15
= 600 V
= 15 V
V
= 15 V
CE
t
Figure 16. Switching Time vs. V
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Switching Time vs. Rg
d(off)
t
, COLLECTOR−EMITTER VOLTAGE (V)
f
475
C
10
25
= 125°C
Rg, GATE RESISTOR (W)
525
35
575
45
100
t
d(off)
625
55
t
65
675
f
1000
CE
75
725
775
85