UG2B-E3/1 Vishay Semiconductors, UG2B-E3/1 Datasheet - Page 3

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UG2B-E3/1

Manufacturer Part Number
UG2B-E3/1
Description
Rectifiers 100 Volt 2.0A 15ns 80 Amp IFSM
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of UG2B-E3/1

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
0.95 V
Recovery Time
15 ns
Forward Continuous Current
2 A
Max Surge Current
80 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Package / Case
DO-15
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
4000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88761
Revision: 23-Oct-09
10 000
1000
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
0.2
Fig. 4 - Typical Reverse Leakage Characteristics
0
T
Percent of Rated Peak Reverse Voltage (%)
J
= 125 °C
0.4
Instantaneous Forward Voltage (V)
20
T
J
0.6
= 150 °C
40
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
T
T
T
T
For technical questions within your region, please contact one of the following:
T
J
J
J
J
0.8
J
= 150 °C
= 125 °C
= 100 °C
= 25 °C
= 25 °C
60
T
J
1.0
= 100 °C
80
1.2
100
1.4
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
0.140 (3.6)
0.104 (2.6)
DIA.
DIA.
100
60
50
40
30
20
10
10
0
1
0.1
0
DiodesEurope@vishay.com
Vishay General Semiconductor
Fig. 5 - Reverse Switching Charateristics
I
V
F
R
Fig. 6 - Typical Junction Capacitance
= 2.0 A
= 30 V
25
Q
t
rr
rr
Junction Temperature (°C)
50
Reverse Voltage (V)
1
75
UG2A thru UG2D
100
10
125
V
dI/dt = 150 A/μs
dI/dt = 100 A/μs
dI/dt = 100 A/μs
dI/dt = 150 A/μs
dI/dt = 20 A/μs
dI/dt = 50 A/μs
dI/dt = 50 A/μs
dI/dt = 20 A/μs
sig
f = 1.0 MHz
T
J
= 50 mV
= 25 °C
150
www.vishay.com
p-p
175
100
3

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