1N5252C-TR Vishay Semiconductors, 1N5252C-TR Datasheet

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1N5252C-TR

Manufacturer Part Number
1N5252C-TR
Description
Zener Diodes 24 Volt 0.5W 2%
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of 1N5252C-TR

Product Category
Zener Diodes
Rohs
yes
Zener Voltage
24 V
Voltage Tolerance
2 %
Voltage Temperature Coefficient
0.088 %/k
Power Dissipation
500 mW
Maximum Reverse Leakage Current
0.1 uA
Maximum Zener Impedance
33 Ohms
Maximum Operating Temperature
+ 200 C
Mounting Style
Through Hole
Package / Case
DO-35
Configuration
Single
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Small Signal Zener Diodes
Features
Applications
Voltage stabilization
Mechanical Data
Case: DO-35 Glass case
Weight: approx. 125 mg
Packaging codes/options:
TAP / 10 k per Ammopack (52 mm tape), 30 k/box
TR / 10 k per 13 " reel , 30 k/box
Absolute Maximum Ratings
T
Thermal Characteristics
T
Electrical Characteristics
T
Document Number 84613
Rev. 1.0, 02-Sep-04
• Silicon Planar Power Zener Diodes.
• Standard Zener voltage tolerance is ± 2 %.
Power dissipation
Z-current
Junction temperature
Storage temperature range
Junction ambient
Forward voltage
amb
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
T
l = 9.5 mm (3/8 "), T
I
F
L
= 200 mA
75 °C
Test condition
Test condition
Test condition
L
=constant
Symbol
V
F
Symbol
Symbol
R
T
P
thJA
I
T
stg
Z
V
j
1N5221C to 1N5267C
Min
- 65 to + 200
Vishay Semiconductors
P
Value
Value
Typ.
500
200
300
V
/V
Z
94 9367
Max
1.1
www.vishay.com
K/W
Unit
mW
Unit
mA
°C
°C
Unit
V
1

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1N5252C-TR Summary of contents

Page 1

... Rev. 1.0, 02-Sep-04 1N5221C to 1N5267C Test condition Symbol stg Test condition Symbol =constant R L thJA Test condition Symbol V F Vishay Semiconductors 94 9367 Value Unit 500 200 ° 200 °C Value Unit 300 K/W Min Typ. Max 1 ...

Page 2

... Maximum Maximum Dynamic Dynamic 1) Impedance Impedance ...

Page 3

... Figure 3. Typical Change of Working Voltage vs. Junction 600 500 400 300 200 100 9602 Figure 4. Total Power Dissipation vs. Ambient Temperature Vishay Semiconductors Typical Maximum Reverse Leakage Temperature of Current Coeffizient @ (%/K) A +0.097 0.1 +0.097 0.1 +0.098 0 (25°C) ...

Page 4

... Vishay Semiconductors =5mA Z 0 – – Z-Voltage ( 9600 Z Figure 5. Temperature Coefficient of Vz vs. Z-Voltage 200 150 V = =25°C j 100 – Z-Voltage ( 9601 Z Figure 6. Diode Capacitance vs. Z-Voltage 100 10 T =25°C ...

Page 5

... JEDEC DO 35 Document Number 84613 Rev. 1.0, 02-Sep-04 1N5221C to 1N5267C Single Pulse 2 i =(–V +(V + – Pulse Length ( Figure 11. Thermal Response Cathode Identification 26 (1.02) min. 3.9 (0.15) max. Vishay Semiconductors R =300K/W thJA T=T –T jmax amb 1/2 T/Z ) )/(2r ) thp zj ∅ 0.55 (0.02) max. 26 (1.02) min. www.vishay.com 5 ...

Page 6

... We reserve the right to make changes to improve technical design Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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