Revision: 21-Dec-11
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current at T
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
Operating junction and storage temperature range
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
T
V
J
I
I
F(AV)
FSM
RRM
E
max.
I
t
R
rr
R
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DO-214AC (SMA)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
(BR)R
A
= 65 °C
= 1 A, T
Ultrafast Avalanche SMD Rectifier
A
= 25 °C unless otherwise noted)
J
= 25 °C
1000 V
150 °C
5.0 μA
20 mJ
75 ns
1.5 A
30 A
1
SYMBOL
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• High reverse voltage
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
T
J
V
I
260 °C
accordance to WEEE 2002/96/EC
I
, T
F(AV)
FSM
E
RRM
R
STG
www.vishay.com/doc?91000
Vishay General Semiconductor
- 55 to + 150
BYG23M
BYG23M
1000
1.5
30
20
DiodesEurope@vishay.com
Document Number: 88962
BYG23M
UNIT
mJ
°C
V
A
A