1N5059/4 Vishay Semiconductors, 1N5059/4 Datasheet - Page 2
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1N5059/4
Manufacturer Part Number
1N5059/4
Description
Rectifiers 2.0 Amp 200 Volt 50 Amp IFSM
Manufacturer
Vishay Semiconductors
Datasheet
1.1N5061TR.pdf
(4 pages)
Specifications of 1N5059/4
Product Category
Rectifiers
Product
Standard Recovery Rectifiers
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
1.15 V at 2.5 A
Recovery Time
4000 ns
Forward Continuous Current
2 A
Max Surge Current
50 A
Reverse Current Ir
1 uA
Mounting Style
SMD/SMT
Package / Case
SOD-57
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
4500
TYPICAL CHARACTERISTICS (T
Rev. 1.7, 12-Sep-12
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Fig. 2 - Max. Reverse Current vs. Junction Temperature
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
15764
15765
1000
200
160
120
100
0.1
10
80
40
0
1
25
25
www.vishay.com
V
R
50
50
T
T
= V
j
j
160 K/W
- Junction Temperature ( °C )
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- Junction Temperature ( °C )
RRM
R
75
45 K/W
75
100 K/W
thJA
1N5059
=
100
100
1N5060
I
F
= 0.5 A, I
1N5061
125
125
V
V
V
R
R
R
V
TEST CONDITION
1N5062
R
= V
= V
= V
amb
= 0 V, f = 1 MHz
150
I
150
RRM
V
R
RRM
RRM
I
F
R
I
R
= 100 μA
F
= 25 C, unless otherwise specified)
= 2.5 A
= 1 A, i
= V
= 1 A
, T
, T
amb
175
175
RRM
j
j
= 100 °C
= 150 °C
R
= 25 °C, unless otherwise specified)
= 0.25 A
2
1N5059, 1N5060, 1N5061, 1N5062
1N5059
1N5060
1N5061
1N5062
PART
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
15763_1
15762
Fig. 4 - Max. Forward Current vs. Forward Voltage
SYMBOL
0.001
V
V
V
V
0.01
1.5
1.0
0.5
0.0
100
3.0
2.5
2.0
0.1
www.vishay.com/doc?91000
(BR)R
(BR)R
(BR)R
(BR)R
C
V
V
10
I
I
I
t
R
R
R
rr
F
F
D
1
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
2 0 4 0 6 0 8 0 100 120 140 160 180
PCB : d = 2 5 m m
R
T
T
thJA
j
amb
= 175 °C
MIN.
225
450
650
900
V
= 100 K/W
Vishay Semiconductors
-
-
-
-
-
-
-
- Ambient T emperature (°C)
F
- Forward Voltage ( V )
T
j
DiodesEurope@vishay.com
= 25°C
TYP.
40
-
-
-
-
-
-
-
-
-
-
R
Document Number: 86000
V
half sinewave
thJA
R
l =10 mm
= V
= 4 5 K/W
MAX
1600
1600
1600
1600
RRM
1.15
100
10
1
1
4
-
UNIT
μA
μA
μA
pF
μs
V
V
V
V
V
V