PSMN2R0-30BL,118 NXP Semiconductors, PSMN2R0-30BL,118 Datasheet - Page 4
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PSMN2R0-30BL,118
Manufacturer Part Number
PSMN2R0-30BL,118
Description
MOSFET Std N-chanMOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN2R0-30BL118.pdf
(15 pages)
Specifications of PSMN2R0-30BL,118
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Resistance Drain-source Rds (on)
2.1 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Power Dissipation
211 W
Factory Pack Quantity
800
NXP Semiconductors
PSMN2R0-30BL
Product data sheet
Fig 3.
10
10
10
(A)
10
I
D
4
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
DSon
(1)
All information provided in this document is subject to legal disclaimers.
= V
1
DS
/ I
D
Rev. 1 — 20 March 2012
N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK
DC
10
PSMN2R0-30BL
V
t
p
100 μs
1 ms
10 ms
100 ms
DS
= 10 μs
(V)
© NXP B.V. 2012. All rights reserved.
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