PSMN2R0-30BL,118 NXP Semiconductors, PSMN2R0-30BL,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN2R0-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R0-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 2.1 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 211 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R0-30BL
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
10
10
10
C
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aaa508
003aad253
C
(V)
C
C
oss
rss
iss
10
Rev. 1 — 20 March 2012
2
N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain
(A)
V
I
(V)
S
100
GS
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
voltage; typical values
0
0
T
j
= 175 °C
30
0.5
V
DS
PSMN2R0-30BL
= 15V
60
1
25 °C
90
1.5
© NXP B.V. 2012. All rights reserved.
Q
003aad255
003aad256
V
G
SD
(nC)
(V)
120
2
9 of 15