NVF3055-100T1G ON Semiconductor, NVF3055-100T1G Datasheet

NVF3055-100T1G

Manufacturer Part Number

NVF3055-100T1G

Description

MOSFET NFET 60V 3A 0.100R

Manufacturer

ON Semiconductor

Datasheet

1.NVF3055-100T1G.pdf (6 pages)

Specifications of NVF3055-100T1G

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

3 A

Resistance Drain-source Rds (on)

88 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

SOT-223

Fall Time

13 ns

Gate Charge Qg

10.6 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

2.1 W

Rise Time

14 ns

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NTF3055-100,

NVF3055-100

Power MOSFET

3.0 Amps, 60 Volts

N−Channel SOT−223

power supplies, converters and power motor controls and bridge

circuits.

Features

•

Applications

•

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.

2. When surface mounted to an FR4 board using minimum recommended pad

October, 2011 − Rev. 4

MAXIMUM RATINGS

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

Gate−to−Source Voltage

Drain Current

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Thermal Resistance

Maximum Lead Temperature for Soldering

Designed for low voltage, high speed switching applications in

AEC−Q101 Qualified and PPAP Capable − NVF3055−100

These Devices are Pb−Free and are RoHS Compliant

Power Supplies

Converters

Power Motor Controls

Bridge Circuits

(Cu. Area 1.127 sq in).

size, 2−2.4 oz. (Cu. Area 0.272 sq in).

− Continuous

− Non−repetitive (t

− Continuous @ T

− Single Pulse (t

Derate above 25°C

Energy − Starting T

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Purposes, 1/8″ from case for 10 seconds

(pk) = 7.0 Apk, L = 3.0 mH, V

= 25 Vdc, V

Rating

≤ 10 ms)

= 25°C

= 100°C

≤ 10 ms)

= 10 Vdc,

= 25°C

= 25°C unless otherwise noted)

= 10 MW)

= 25°C (Note 1)

= 25°C (Note 2)

= 60 Vdc)

Symbol

DSS

DGR

, T

qJA

stg

to 175

Value

0.014

± 20

± 30

72.3

−55

114

260

3.0

1.4

9.0

2.1

1.3

W/°C

°C/W

Unit

Vdc

Vpk

Adc

Apk

°C

†For information on tape and reel specifications,

NTF3055−100T1G

NTF3055−100T3G

NVF3055−100T1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

(Note: Microdot may be in either location)

3055

ORDERING INFORMATION

CASE 318E

SOT−223

STYLE 3

http://onsemi.com

DS(on)

3.0 A, 60 V

= Assembly Location

= Work Week

= Specific Device Code

= Pb−Free Package

N−Channel

(Pb−Free)

SOT−223

Package

= 110 mW

Publication Order Number:

Gate

ASSIGNMENT

MARKING

DIAGRAM

& PIN

3055 G

AWW

Drain

NTF3055−100/D

1000 / Tape &

4000 / Tape &

1000 / Tape &

Shipping

Reel

Source

†

Related parts for NVF3055-100T1G

NVF3055-100T1G Summary of contents

Page 1

... Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC−Q101 Qualified and PPAP Capable − NVF3055−100 • These Devices are Pb−Free and are RoHS Compliant Applications • Power Supplies • ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note Vdc 250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS, Figure 1. On−Region Characteristics 0. ...

Page 4

700 C iss 600 500 C rss 400 300 200 C rss 100 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure ...

Page 5

Cu Pad ( inch FR4) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0 TIME (s) Figure 13. Thermal Response http://onsemi.com 5 10 100 1000 ...

Page 6

... A 0.08 (0003) A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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