NVF3055-100T1G ON Semiconductor, NVF3055-100T1G Datasheet - Page 4

• Manufacturer Part Number: NVF3055-100T1G
• Description: MOSFET NFET 60V 3A 0.100R
• Manufacturer: ON Semiconductor

Specifications of NVF3055-100T1G

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3 A
• Resistance Drain-source Rds (on): 88 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 13 ns
• Gate Charge Qg: 10.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.1 W
• Rise Time: 14 ns

0.01
800
700
600
500
400
300
200
100
100
100
0.1
10
10
0
1
1
10
0.1
1
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
V
SINGLE PULSE
T
C
V
I
V
C
Figure 9. Resistive Switching Time Variation
D
V
C
GS
Figure 11. Maximum Rated Forward Biased
DS
GS
iss
rss
DS
= 3 A
= 25°C
V
= 20 V
DS
= 30 V
= 10 V
= 0 V
5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
V
THERMAL LIMIT
PACKAGE LIMIT
GS
t
d(off)
R
R
versus Gate Resistance
DS(on)
0
G
Safe Operating Area
, GATE RESISTANCE (W)
1
V
V
10 ms
DS
GS
LIMIT
= 0 V
5
(VOLTS)
10
C
t
f
rss
10
1 ms
100 ms
10
t
d(on)
15
C
C
oss
t
iss
r
T
J
= 25°C
dc
20
http://onsemi.com
100
100
25
4
12
10
80
70
60
50
40
30
20
10
0.54
8
6
4
2
0
3
2
1
0
0
0
25
Figure 10. Diode Forward Voltage versus Current
Figure 12. Maximum Avalanche Energy versus
Drain−to−Source Voltage versus Total Charge
V
T
Q
J
GS
0.58
T
1
V
= 25°C
J
SD
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
50
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
2
0.62
Starting Junction Temperature
Figure 8. Gate−to−Source and
Q
g
, TOTAL GATE CHARGE (nC)
0.66
Q
75
4
2
0.7
Q
T
100
6
0.74
V
0.78
125
GS
8
0.82 0.86
I
T
I
D
D
150
J
10
= 7 A
= 3 A
= 25°C
0.9
175
12