NVF3055-100T1G ON Semiconductor, NVF3055-100T1G Datasheet - Page 5

• Manufacturer Part Number: NVF3055-100T1G
• Description: MOSFET NFET 60V 3A 0.100R
• Manufacturer: ON Semiconductor

Specifications of NVF3055-100T1G

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3 A
• Resistance Drain-source Rds (on): 88 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 13 ns
• Gate Charge Qg: 10.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.1 W
• Rise Time: 14 ns

NTF3055−100, NVF3055−100
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Figure 13. Thermal Response
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