UGB18ACT/45 Vishay Semiconductors, UGB18ACT/45 Datasheet - Page 3

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UGB18ACT/45

Manufacturer Part Number
UGB18ACT/45
Description
Rectifiers 50 Volt 18 Amp 20ns Dual 175 Amp IFSM
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of UGB18ACT/45

Product Category
Rectifiers
Product
Ultra Fast Recovery Rectifiers
Configuration
Dual Common Cathode
Reverse Voltage
50 V
Forward Voltage Drop
1.2 V at 20 A
Recovery Time
30 ns
Forward Continuous Current
18 A
Max Surge Current
175 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
TO-263AB
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88759
Revision: 09-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
1000
0.01
100
100
0.1
24
20
16
12
10
10
8
4
0
1
0.4
0
1
Figure 1. Forward Current Derating Curve
25
0.6
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
50
Case Temperature (°C)
Current Per Diode
0.8
75
T
8.3 ms Single Half Sine-Wave
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
C
For technical questions within your region, please contact one of the following:
1.0
= 105 °C
10
Resistive or Inductive Load
100
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.2
125
1.4
150
175
100
1.6
UG(F,B)18ACT thru UG(F,B)18DCT
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
Figure 5. Reverse Switching Characteristics Per Diode
100
100
0.1
10
10
60
50
40
30
20
10
0
1
1
Figure 6. Typical Junction Capacitance Per Diode
0.1
0
0
I
V
Vishay General Semiconductor
F
R
Percent of Rated Peak Reverse Voltage (%)
= 9.0 A
= 30 V
25
20
T
J
Junction Temperature (°C)
T
= 25 °C
T
dI/dt =
J
50
J
= 100 °C
= 125 °C
Reverse Voltage (V)
1
40
75
100
60
150 A/µs
10
125
T
f = 1.0 MHz
V
J
100 A/µs
sig
= 125 °C
150 A/µs
20 A/µs
20 A/µs
100 A/µs
50 A/µs
50 A/µs
= 50 mVp-p
80
150
www.vishay.com
t
Q
rr
rr
175
100
100
3

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