SI6866DQ-T1-E3 Vishay/Siliconix, SI6866DQ-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI6866DQ-T1-E3
• Description: MOSFET 20V 5.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI6866DQ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.8 A
• Resistance Drain-source Rds (on): 30 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Fall Time: 37 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.2 W
• Rise Time: 37 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 41 ns
• Part # Aliases: SI6866DQ-E3

Si6866DQ
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?71102.
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.2
−0.4
−0.6
0.4
0.2
0.01
0.01
−50
0.1
0.1
2
1
2
1
10
10
−4
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
− Temperature (_C)
25
10
Single Pulse
−3
50
10
I
Single Pulse
D
−3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Foot
75
100
10
−2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
For related documents such as package/tape drawings, part marking, and reliability data, see
−2
10
−1
10
1
−1
32
24
16
10
8
0
−2
Single Pulse Power, Junction-to-Ambient
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
−1
DM
JM
− T
t
1
Time (sec)
A
1
= P
t
2
DM
1
Z
thJA
S-50695—Rev. B, 18-Apr-05
thJA
100
t
t
1
2
(t)
Document Number: 71102
= 86_C/W
10
600
10
100