BUK9609-75A /T3 NXP Semiconductors, BUK9609-75A /T3 Datasheet

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BUK9609-75A /T3

Manufacturer Part Number
BUK9609-75A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9609-75A /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
75 A
Resistance Drain-source Rds (on)
0.0085 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
226 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
230 W
Rise Time
185 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
424 ns
Part # Aliases
BUK9609-75A,118
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
[1]
Symbol
V
P
Static characteristics
R
Avalanche ruggedness
E
I
D
DS
tot
DS(AL)S
DSon
BUK9609-75A
N-channel TrenchMOS logic level FET
Rev. 4 — 30 August 2011
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Continuous current is limited by package.
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state resistance
non-repetitive
drain-source
avalanche energy
Quick reference data
Conditions
T
V
see
T
V
V
V
see
I
R
T
D
j
mb
j(init)
GS
GS
GS
GS
GS
≥ 25 °C; T
= 75 A; V
Figure
Figure
= 25 °C; see
= 5 V; T
= 4.5 V; I
= 10 V; I
= 5 V; I
= 50 Ω; V
= 25 °C; unclamped
3; see
13; see
D
sup
mb
j
D
≤ 175 °C
= 25 A; T
D
GS
= 25 A; T
≤ 75 V;
= 25 °C;
= 25 A; T
= 5 V;
Figure 2
Figure 1
Figure 14
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
j
= 25 °C;
j
j
= 25 °C
= 25 °C
[1]
Min
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
7.23 8.5
7.6
-
Max Unit
75
75
230
9.95 mΩ
9
562
V
A
W
mΩ
mΩ
mJ

Related parts for BUK9609-75A /T3

BUK9609-75A /T3 Summary of contents

Page 1

... BUK9609-75A N-channel TrenchMOS logic level FET Rev. 4 — 30 August 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... T pulsed ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 4 — 30 August 2011 BUK9609-75A N-channel TrenchMOS logic level FET Graphic symbol G mbb076 2 3 Min - - -10 [1] Figure 1 - [1] Figure 3 ...

Page 3

... P 150 200 T (°C) mb Fig All information provided in this document is subject to legal disclaimers. Rev. 4 — 30 August 2011 BUK9609-75A N-channel TrenchMOS logic level FET 120 der (%) 100 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ ...

Page 4

... BUK9609-75A Product data sheet Conditions see Figure 4 minimum footprint ; mounted on a printed-circuit board −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 4 — 30 August 2011 BUK9609-75A N-channel TrenchMOS logic level FET Min Typ - - - 50 03nb45 t p δ ...

Page 5

... see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 4 — 30 August 2011 BUK9609-75A N-channel TrenchMOS logic level FET Min Typ Max 1 2.3 ...

Page 6

... Fig 6. 03aa36 16000 C (pF) 14000 12000 10000 max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 4 — 30 August 2011 BUK9609-75A N-channel TrenchMOS logic level FET Drain-source on-state resistance as a function of gate-source voltage ...

Page 7

... V (V) GS Fig 10. Gate-source voltage as a function of gate 03nb38 60 80 100 I (A) D Fig 12. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 4 — 30 August 2011 BUK9609-75A N-channel TrenchMOS logic level FET 5 4 3.5 3 2.5 2 1 ...

Page 8

... Fig 14. Normalized drain-source on-state resistance 120 I S (A) 100 175 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 4 — 30 August 2011 BUK9609-75A N-channel TrenchMOS logic level FET 2.4 a 1.6 0.8 0 − factor as a function of junction temperature 03nb36 = 25 ° 0.8 1.0 V (V) SD ...

Page 9

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 4 — 30 August 2011 BUK9609-75A N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2011. All rights reserved. SOT404 ...

Page 10

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9609-75A v.4 20110830 • Modifications: Various changes to content. BUK9609-75A v.3 20080922 BUK9609-75A Product data sheet Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...

Page 11

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 4 — 30 August 2011 BUK9609-75A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 4 — 30 August 2011 BUK9609-75A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 30 August 2011 Document identifier: BUK9609-75A ...

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