VS-VSKD320-04PBF Vishay Semiconductors, VS-VSKD320-04PBF Datasheet - Page 10
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VS-VSKD320-04PBF
Manufacturer Part Number
VS-VSKD320-04PBF
Description
SCR Modules 400volt 320amp
Manufacturer
Vishay Semiconductors
Datasheet
1.IRKD270-30.pdf
(13 pages)
Specifications of VS-VSKD320-04PBF
Product Category
SCR Modules
Rohs
yes
On-state Rms Current (it Rms)
502 A
Non Repetitive On-state Current
10110 A
Breakover Current Ibo Max
10580 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
50 mA
On-state Voltage
1.28 V
Maximum Operating Temperature
+ 150 C
Mounting Style
Chassis
Package / Case
MAGN-A-PAK
Circuit Type
Diodes
Current Rating
320 A
Minimum Operating Temperature
- 40 C
VSK.250, VSK.270, VSK.320 Series
Vishay Semiconductors
www.vishay.com
10
Fig. 30 - Maximum Non-Repetitive Surge Current
Fig. 31 - Maximum Non-Repetitive Surge Current
10000
10000
9000
8000
7000
6000
5000
4000
3000
2000
9000
8000
7000
6000
5000
4000
3000
2000
Numb er Of Equal Amplitude Half Cyc le Current Pulses (N)
0.01
1
At Any Ra ted Load Condition And With
Ma ximum Non Rep etitive Surge Current
VSK.320.. Series
Per Junc tion
Rated V
VSK.320.. S eries
Per Junc tio n
Pulse T rain Dura tion (s)
R RM
Versus Pulse T rain Dura tion.
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
2800
2400
2000
1600
1200
Rated V
No Vo ltage Reap plied
App lied Following S urge.
800
400
For technical questions within your region, please contact one of the following:
0.1
0
10
0
Initial T = 150°C
Initial T = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
R RM
200
Reap plied
T otal Output Current (A)
J
J
Standard Recovery Diodes, 250 A to 320 A
400
Fig. 29 - Forward Power Loss Characteristics
100
1
(Rec t)
(MAGN-A-PAK Power Modules)
3 x VSK.320.. Series
T hree Phase Bridge
120°
600
Connected
T = 150°C
J
800
1000
0
Maximum Allowable Ambient T emperature (°C)
25
50
Fig. 33 - Thermal Impedance Z
10000
0.001
Fig. 32 - Forward Voltage Drop Characteristics
DiodesEurope@vishay.com
1000
0.01
100
0.1
75
0.001
1
0.5
S teady S tate Value:
R
(DC Operation)
Instantaneous Forward Voltage (V)
thJC
100
T = 25°C
S quare Wave Pulse Duration (s )
1
J
0.01
= 0.45 K/ W
125
1.5
0.1
2
150
VSK.320.. S eries
Per Junc tion
VSK.320.. S eries
Per Junction
2.5
1
thJC
Document Number: 93581
T = 150°C
3
J
10
Characteristics
3.5
Revision: 02-Jul-10
100
4