VS-VSKTF180-12HJP Vishay Semiconductors, VS-VSKTF180-12HJP Datasheet - Page 6
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VS-VSKTF180-12HJP
Manufacturer Part Number
VS-VSKTF180-12HJP
Description
SCR Modules 180 Amp 1200 Volt 400 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-VSKTF180-12HKP.pdf
(11 pages)
Specifications of VS-VSKTF180-12HJP
Product Category
SCR Modules
Rohs
yes
On-state Rms Current (it Rms)
400 A
Non Repetitive On-state Current
7130 A
Breakover Current Ibo Max
7470 A
Rated Repetitive Off-state Voltage Vdrm
1.2 kV
Off-state Leakage Current @ Vdrm Idrm
50 mA
On-state Voltage
1.84 V
Holding Current (ih Max)
600 mA
Gate Trigger Voltage (vgt)
3 V
Gate Trigger Current (igt)
200 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Chassis
Package / Case
MAGN-A-PAK
Circuit Type
Thyristors / Thyristors
Current Rating
180 A
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
2
VSK.F180..P Series
Vishay Semiconductors
www.vishay.com
6
1E4
1E3
1E2
1E1
1E4
1E3
1E2
1E1
1E4
1E3
1E2
1E1
1E1
1E1
1E1
tp
tp
tp
5000
VSK .F1 80.. Se rie s
Tra p ezoid a l p ulse
VSK .F180.. Series
T
T
5 0 0 0
VSK .F180.. Serie s
Sinuso id a l p ulse
T = 85 °C
Tra p ezo id a l p ulse
5 00 0
C
C
C
= 60 °C d i/d t 50A/μs
= 8 5 °C d i/d t 50A/μs
1E2
1E2
1E2
Pulse Ba sewid th (μs)
Pulse Basewidth (μs)
Pulse Base w id th (μs)
2 50 0
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
2 50 0
For technical questions within your region, please contact one of the following:
2 50 0
1 0 0 0
1000
1 00 0
40 0
40 0
400
Fast Thyristor/Diode and Thyristor/Thyristor
1E3
1 5 0
1E3
1E3
1 50
Snub b er circuit
R = 10 ohm s
C = 0.47 μF
V
1 5 0
Snub b er circuit
R = 10 ohm s
C = 0.47 μF
V
s
s
D
Snub b er circuit
R = 10 ohm s
C = 0.47 μF
V
(MAGN-A-PAK Power Modules), 180 A
s
s
D
50 H z
= 80% V
s
s
D
= 80% V
50 H z
= 80% V
50 H z
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
D R M
D R M
D R M
1E4
1E4
1E4
1E4
1E4
1E4
DiodesEurope@vishay.com
1E1
E1
1E1
1E1
1E1
tp
tp
tp
5 00 0
VSK .F180.. Series
VSK .F 180.. Series
VSK .F 180.. Series
Tra p ezoid a l p ulse
T
Sinusoid a l pulse
Tra p ezoid a l p ulse
T
T = 60 °C
5000
5 00 0
C
C
C
= 85 °C d i/d t 100A/μs
= 60 °C d i/d t 100A/μs
1E2
1E2
1E2
Pulse Basewid th (μs)
Pulse Ba se w idth (μs)
Pulse Base w idth (μs)
2 50 0
2 50 0
2 50 0
1 0 0 0
1000
1 00 0
Document Number: 93685
40 0
400
400
1E3
1E3
1E3
1 5 0
1 5 0
1 5 0
Snub b e r circ uit
R = 10 ohm s
C = 0.47 μF
V
Snub b e r circuit
R = 10 ohm s
C = 0.47 μF
V
Revision: 19-Jul-10
s
s
D
Snub b er circuit
R = 10 ohm s
C = 0.47 μF
V = 80% V
s
s
D
= 80% V
s
s
D
50 H z
= 80% V
50 H z
50 H z
D RM
D R M
D RM
1E4
1E4
1E4