VS-VSKTF180-12HJP Vishay Semiconductors, VS-VSKTF180-12HJP Datasheet - Page 6

• Manufacturer Part Number: VS-VSKTF180-12HJP
• Description: SCR Modules 180 Amp 1200 Volt 400 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKTF180-12HJP

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 400 A
• Non Repetitive On-state Current: 7130 A
• Breakover Current Ibo Max: 7470 A
• Rated Repetitive Off-state Voltage Vdrm: 1.2 kV
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• On-state Voltage: 1.84 V
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: MAGN-A-PAK
• Circuit Type: Thyristors / Thyristors
• Current Rating: 180 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 2

VSK.F180..P Series
Vishay Semiconductors
www.vishay.com
6
1E4
1E3
1E2
1E1
1E4
1E3
1E2
1E1
1E4
1E3
1E2
1E1
1E1
1E1
1E1
tp
tp
tp
5000
VSK .F1 80.. Se rie s
Tra p ezoid a l p ulse
VSK .F180.. Series
T
T
5 0 0 0
VSK .F180.. Serie s
Sinuso id a l p ulse
T = 85 °C
Tra p ezo id a l p ulse
5 00 0
C
C
C
= 60 °C d i/d t 50A/μs
= 8 5 °C d i/d t 50A/μs
1E2
1E2
1E2
Pulse Ba sewid th (μs)
Pulse Basewidth (μs)
Pulse Base w id th (μs)
2 50 0
[e-mail], [e-mail],
2 50 0
For technical questions within your region, please contact one of the following:
2 50 0
1 0 0 0
1000
1 00 0
40 0
40 0
400
Fast Thyristor/Diode and Thyristor/Thyristor
1E3
1 5 0
1E3
1E3
1 50
Snub b er circuit
R = 10 ohm s
C = 0.47 μF
V
1 5 0
Snub b er circuit
R = 10 ohm s
C = 0.47 μF
V
s
s
D
Snub b er circuit
R = 10 ohm s
C = 0.47 μF
V
(MAGN-A-PAK Power Modules), 180 A
s
s
D
50 H z
= 80% V
s
s
D
= 80% V
50 H z
= 80% V
50 H z
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
D R M
D R M
D R M
1E4
1E4
1E4
1E4
1E4
1E4
[e-mail]
1E1
E1
1E1
1E1
1E1
tp
tp
tp
5 00 0
VSK .F180.. Series
VSK .F 180.. Series
VSK .F 180.. Series
Tra p ezoid a l p ulse
T
Sinusoid a l pulse
Tra p ezoid a l p ulse
T
T = 60 °C
5000
5 00 0
C
C
C
= 85 °C d i/d t 100A/μs
= 60 °C d i/d t 100A/μs
1E2
1E2
1E2
Pulse Basewid th (μs)
Pulse Ba se w idth (μs)
Pulse Base w idth (μs)
2 50 0
2 50 0
2 50 0
1 0 0 0
1000
1 00 0
Document Number: 93685
40 0
400
400
1E3
1E3
1E3
1 5 0
1 5 0
1 5 0
Snub b e r circ uit
R = 10 ohm s
C = 0.47 μF
V
Snub b e r circuit
R = 10 ohm s
C = 0.47 μF
V
Revision: 19-Jul-10
s
s
D
Snub b er circuit
R = 10 ohm s
C = 0.47 μF
V = 80% V
s
s
D
= 80% V
s
s
D
50 H z
= 80% V
50 H z
50 H z
D RM
D R M
D RM
1E4
1E4
1E4