SI4482DY-T1-E3 Vishay/Siliconix, SI4482DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4482DY-T1-E3
• Description: MOSFET 100V 4.6A 2.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI4482DY-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.6 A
• Resistance Drain-source Rds (on): 60 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 25 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 12 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 60 ns
• Part # Aliases: SI4482DY-E3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70749
S09-0767-Rev. C, 04-May-09
0.10
0.08
0.06
0.04
0.02
0.00
10
40
30
20
10
0
8
6
4
2
0
0.0
0
0
0.5
V
I
D
V
DS
GS
= 4.6 A
On-Resistance vs. Drain Current
= 50 V
6
V
= 10 V thru 6 V
1.0
DS
V
10
Output Characteristics
Q
GS
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
= 6 V
D
1.5
- Drain Current (A)
Gate Charge
12
1 V, 2 V, 3 V
2.0
20
18
2.5
3.0
30
V
GS
24
= 10 V
3.5
4 V
5 V
4.0
40
30
2500
2000
1500
1000
500
2.5
2.0
1.5
1.0
0.5
0.0
40
32
24
16
8
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
V
I
D
GS
= 4.6 A
C
1
oss
20
= 10 V
V
V
Transfer Characteristics
T
0
DS
GS
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
2
Capacitance
25
40
25 °C
T
50
C
Vishay Siliconix
3
C
iss
= 125 °C
60
75
Si4482DY
4
www.vishay.com
100
- 55 °C
80
5
125
150
100
6
3