SI4482DY-T1-E3 Vishay/Siliconix, SI4482DY-T1-E3 Datasheet - Page 4
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SI4482DY-T1-E3
Manufacturer Part Number
SI4482DY-T1-E3
Description
MOSFET 100V 4.6A 2.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4482DY-E3.pdf
(5 pages)
Specifications of SI4482DY-T1-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.6 A
Resistance Drain-source Rds (on)
60 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
25 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Rise Time
12 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
60 ns
Part # Aliases
SI4482DY-E3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4482DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SI4482DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4482DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
- 0.3
- 0.6
- 0.9
- 1.2
0.01
0.6
0.3
0.0
0.1
40
10
1
2
1
- 50
10
0
www.vishay.com/ppg?70749.
0.05
-4
0.02
Duty Cycle = 0.5
0.2
0.1
- 25
Source-Drain Diode Forward Voltage
0.2
T
V
J
0
SD
= 150 °C
Threshold Voltage
- Source-to-Drain Voltage (V)
T
0.4
J
25
- Temperature (°C)
10
-3
0.6
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
75
= 250 µA
0.8
T
J
100
Single Pulse
= 25 °C
1.0
125
10
-2
Square Wave Pulse Duration (s)
150
1.2
10
-1
0.10
0.08
0.06
0.04
0.02
0.00
50
40
30
20
10
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
2
V
GS
0.10
Single Pulse Power
- Gate-to-Source Voltage (V)
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
Time (s)
4
DM
JM
S09-0767-Rev. C, 04-May-09
- T
t
Document Number: 70749
1
A
1.00
= P
t
2
I
6
D
DM
= 4.6 A
Z
thJA
thJA
t
t
1
2
(t)
= 50 °C/W
10
8
10.00
30
10