BUK9628-100A /T3 NXP Semiconductors, BUK9628-100A /T3 Datasheet - Page 5

• Manufacturer Part Number: BUK9628-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9628-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 49 A
• Resistance Drain-source Rds (on): 0.027 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 166 W
• Rise Time: 58 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 250 ns
• Part # Aliases: BUK9628-100A,118

NXP Semiconductors
6. Characteristics
Table 6.
BUK9628-100A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain voltage
reverse recovery time
recovered charge
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
I
I
V
V
V
V
V
V
V
V
V
T
V
R
measured from drain lead 6 mm from
package to centre of die ; T
measured from upper edge of drain tab
to centre of die ; T
measured from source lead to source
bond pad ; T
I
I
I
V
D
D
D
D
D
S
S
S
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
GS
G(ext)
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 °C
= 25 A; V
= 49 A; V
= 49 A; dI
= 100 V; V
= 100 V; V
= 30 V; R
= 10 V; V
= -10 V; V
= 5 V; I
= 5 V; I
= 10 V; I
= 4.5 V; I
= 0 V; V
= -10 V; V
Rev. 02 — 26 April 2011
= 10 Ω; T
D
D
GS
GS
S
DS
DS
DS
DS
j
D
/dt = -100 A/µs;
= 25 A; T
= 25 A; T
D
= 25 °C
DS
L
DS
DS
= 0 V; T
= 0 V; T
= 25 A; T
GS
GS
= V
= V
= V
= 25 A; T
= 1.2 Ω; V
GS
GS
= 25 V; f = 1 MHz;
j
= 0 V; T
= 25 °C
= 0 V; T
= 30 V; T
= 0 V; T
= 0 V; T
j
= 0 V; T
= 0 V; T
GS
GS
GS
= 25 °C
; T
; T
; T
j
j
j
j
= 25 °C
= 175 °C
= 25 °C
= 25 °C
j
j
j
j
j
j
= 25 °C
= 175 °C
= -55 °C
= 25 °C
j
GS
= 25 °C
= 25 °C
j
j
j
j
= 25 °C
j
= 25 °C
= 175 °C
j
= 25 °C
= -55 °C
= 25 °C
= 25 °C
= 5 V;
N-channel TrenchMOS logic level FET
BUK9628-100A
Min
100
89
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.05
-
2
2
18.5
-
17
18.8
3220
315
187
11
58
250
106
4.5
2.5
7.5
0.85
1.1
63
0.22
© NXP B.V. 2011. All rights reserved.
378
256
350
Max
-
-
2
-
2.3
10
500
100
100
28
70
27
31
4293
16
87
148
-
-
-
1.2
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
V
ns
µC
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