BUK9620-55A /T3 NXP Semiconductors, BUK9620-55A /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK9620-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9620-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 54 A
• Resistance Drain-source Rds (on): 0.018 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 93 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 118 W
• Rise Time: 124 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 92 ns
• Part # Aliases: BUK9620-55A,118

NXP Semiconductors
BUK9620-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
(A)
V
I
D
GS(th)
(V)
120
100
80
60
40
20
2.5
1.5
0.5
0
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0
2
T
j
= 25 °C
60
max
typ
min
4
120
T
V
j
All information provided in this document is subject to legal disclaimers.
= 175 °C
GS
03aa33
T
j
( ° C)
(V)
03nc89
180
6
Rev. 02 — 4 June 2010
Fig 10. Gate-source voltage as a function of gate
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
DSon
V
(V)
GS
50
40
30
20
10
5
4
3
2
1
0
charge; typical values
of drain current; typical values
0
0
V
GS
(V) =
N-channel TrenchMOS logic level FET
3
3.2
10
50
3.4
V
3.6
BUK9620-55A
DD
3.8
= 14V
4
100
20
© NXP B.V. 2010. All rights reserved.
Q
V
I
DD
G
D
(nC)
(A)
= 44V
03nc87
03nc92
5
150
30
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