BUK9620-55A /T3 NXP Semiconductors, BUK9620-55A /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK9620-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9620-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 54 A
• Resistance Drain-source Rds (on): 0.018 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 93 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 118 W
• Rise Time: 124 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 92 ns
• Part # Aliases: BUK9620-55A,118

NXP Semiconductors
BUK9620-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
a
2.4
1.8
1.2
0.6
0
−60
factor as a function of junction temperature
0
60
(A)
I
S
120
100
80
60
40
20
0
120
0.0
All information provided in this document is subject to legal disclaimers.
T
j
(°C)
03aa28
180
Rev. 02 — 4 June 2010
0.5
T
j
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
C (pF)
1.0
4500
4000
3500
3000
2500
2000
1500
1000
500
T
0
10
j
as a function of drain-source voltage; typical
values
= 25 °C
V
−2
C
C
C
SD
iss
oss
rss
(V)
03nc86
N-channel TrenchMOS logic level FET
1.5
10
−1
BUK9620-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nc93
(V)
10
2
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