AT25DF641-MWH-Y Atmel, AT25DF641-MWH-Y Datasheet - Page 2

IC FLASH 64MBIT 100MHZ 8VDFN

AT25DF641-MWH-Y

Manufacturer Part Number
AT25DF641-MWH-Y
Description
IC FLASH 64MBIT 100MHZ 8VDFN
Manufacturer
Atmel
Datasheet

Specifications of AT25DF641-MWH-Y

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
64M (32K pages x 256 bytes)
Speed
100MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFN
Architecture
Sectored
Interface Type
SPI Serial
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
19 mA
Mounting Style
SMD/SMT
Organization
64 KB x 128
Cell Type
NOR
Density
64Mb
Access Time (max)
5ns
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
VDFN
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Supply Current
19mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description
®
The Atmel
AT25DF641 is a serial interface Flash memory device designed for use in a wide variety of high-
volume consumer based applications in which program code is shadowed from Flash memory into embedded or
external RAM for execution. The flexible erase architecture of the AT25DF641, with its erase granularity as small
as 4-Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM
devices.
The physical sectoring and the erase block sizes of the AT25DF641 have been optimized to meet the needs of
today's code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the
memory space can be used much more efficiently. Because certain code modules and data storage segments
must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with
large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory
space efficiency allows additional code routines and data storage segments to be added while still maintaining the
same overall device density.
The AT25DF641 also offers a sophisticated method for protecting individual sectors against erroneous or
malicious program and erase operations. By providing the ability to individually protect and unprotect sectors, a
system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory
array securely protected. This is useful in applications where program code is patched or updated on a subroutine
or module basis or in applications where data storage segments need to be modified without running the risk of
errant modifications to the program code segments. In addition to individual sector protection capabilities, the
AT25DF641 incorporates Global Protect and Global Unprotect features that allow the entire memory array to be
either protected or unprotected all at once. This reduces overhead during the manufacturing process since
sectors do not have to be unprotected one-by-one prior to initial programming.
To take code and data protection to the next level, the AT25DF641 incorporates a sector lockdown mechanism
that allows any combination of individual 64-Kbyte sectors to be locked down and become permanently read-only.
This addresses the need of certain secure applications that require portions of the Flash memory array to be
permanently protected against malicious attempts at altering program code, data modules, security information, or
encryption/decryption algorithms, keys, and routines. The device also contains a specialized OTP (One-Time
Programmable) Security Register that can be used for purposes such as unique device serialization, system-level
Electronic Serial Number (ESN) storage, locked key storage, etc.
Specifically designed for use in 3-volt systems, the AT25DF641 supports read, program, and erase operations
with a supply voltage range of 2.7V to 3.6V. No separate voltage is required for programming and erasing.
Atmel AT25DF641
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