VS-T90RIA120S90 Vishay Semiconductors, VS-T90RIA120S90 Datasheet - Page 2

• Manufacturer Part Number: VS-T90RIA120S90
• Description: SCR Modules 90 Amp 1200 Volt
• Manufacturer: Vishay Semiconductors

Specifications of VS-T90RIA120S90

• Product Category: SCR Modules
• On-state Rms Current (it Rms): 141 A
• Non Repetitive On-state Current: 1780 A
• Breakover Current Ibo Max: 1870 A
• Rated Repetitive Off-state Voltage Vdrm: 1.2 kV
• Off-state Leakage Current @ Vdrm Idrm: 100 uA
• On-state Voltage: 1.55 V
• Holding Current (ih Max): 200 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Gate Trigger Current (igt): 100 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: D-55
• Circuit Type: SCR
• Current Rating: 90 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 10

T..RIA Series
Vishay High Power Products
www.vishay.com
2
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
on-state, non-repetitive
surge current
Maximum I
Maximum I
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
2
2
t for fusing
√t for fusing
SYMBOL
SYMBOL
V
V
I
T(RMS)
I
I
T(TO)1
T(TO)2
V
V
T(AV)
TSM
t
I
For technical questions, contact: [e-mail]
I
r
r
t
I
I
t
gd
2
2
TM
FM
t1
t2
H
rr
L
q
t
√t
T
I
T
T
-dI/dt = 15 A/µs, V
180° conduction, half sine wave
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
Average power = V
I
Average power = V
Anode supply = 6 V, initial I
Anode supply = 6 V, resistive load = 10 Ω
Gate pulse: 10 V, 100 µs, T
Medium Power Phase Control Thyristors
TM
TM
g
J
J
J
= 500 mA, t
= 25 °C, V
= 125 °C, I
= T
= π x I
= π x I
(Power Modules), 50 A/70 A/90 A
J
maximum, I
T(AV)
T(AV)
T(AV)
T(AV)
), T
), T
d
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
TM
r
, T
, T
T(AV)
T(AV)
= 50 % V
≤ 0.5, t
TEST CONDITIONS
J
J
= 50 A, t
J
J
maximum
maximum
R
= 25 °C, t
= 25 °C, t
T(TO)
T(TO)
TM
< I < π x I
< I < π x I
= 100 V, linear to 80 % V
TEST CONDITIONS
RRM
RRM
p
= 50 A, t
≥ 6 µs
DRM
x I
x I
p
= 300 µs, dI/dt = 10 A/µs
T(AV)
T(AV)
T
J
p
p
, I
T(AV)
T(AV)
= 30 A, T
= 25 °C
= 400 µs square
= 400 µs square
TM
Sine half wave,
initial T
p
+ r
+ r
= 300 µs
= 50 A
), T
), T
f
f
x (I
x (I
J
J
J
= T
maximum
maximum
J
T(RMS)
T(RMS)
= 25 °C
J
maximum
)
)
DRM
2
2
T50RIA T70RIA T90RIA UNITS
85 500 138 500 159 100
1310
1370
1100
1150
8550
7800
6050
5520
0.97
1.13
1.60
1.60
200
400
4.1
3.3
50
70
80
13 860
12 650
Document Number: 93756
1660
1740
1400
1460
9800
8950
VALUES
0.77
0.88
1.55
1.55
110
200
400
3.6
3.2
70
70
110
0.9
3
Revision: 03-Jun-08
15 900
14 500
11 250
10 270
1780
1870
1500
1570
0.78
0.88
1.55
1.55
141
200
400
2.9
2.6
90
70
UNITS
µs
A
A
mΩ
mA
°C
A
A
A
V
V
V
2
2
s
√s