VS-10TTS08STRLPBF Vishay Semiconductors, VS-10TTS08STRLPBF Datasheet - Page 6
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VS-10TTS08STRLPBF
Manufacturer Part Number
VS-10TTS08STRLPBF
Description
SCRs 800 Volt 140 Amp
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-10TTS08SPBF.pdf
(7 pages)
Specifications of VS-10TTS08STRLPBF
Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
140 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
0.05 mA
Forward Voltage Drop
1.15 V
Gate Trigger Voltage (vgt)
1 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
15 mA
Holding Current (ih Max)
30 mA
Mounting Style
SMD/SMT
Package / Case
D2PAK
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
800
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
DIMENSIONS in millimeters and inches
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Document Number: 95046
Revision: 31-Mar-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Conforms to JEDEC outline D
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
(3)
SYMBOL
D
L2
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB
L1
A1
b1
b2
b3
c1
c2
A
D
b
c
2 x
B
e
1
B
(2)(3)
MILLIMETERS
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
E
4
2
3
MAX.
0.254
4.83
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
2 x b
2 x b2
2
0.010
H
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
PAK (SMD-220)
A
(2)
For technical questions within your region, please contact one of the following:
M
C
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
Lead tip
MIN.
Detail A
A
M
INCHES
B
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0° to 8°
This document is subject to change without notice.
± 0.004
c
Gauge
plane
L3
A
c2
NOTES
M
4
4
4
2
B
A A
B
A
D
L
2
Rotated 90 °CW
PAK
L4
Scale: 8:1
Detail “A”
SYMBOL
View A - A
D1
E1
L1
L2
L3
L4
E
H
e
L
(E)
E1
DiodesEurope@vishay.com
A1
H
14.61
MILLIMETERS
MIN.
9.65
6.86
7.90
1.78
1.27
4.78
-
(3)
2.54 BSC
0.25 BSC
(D1)
B
Seating
Outline Dimensions
(3)
Vishay Semiconductors
plane
MAX.
10.67
15.88
8.00
8.80
2.79
1.65
1.78
5.28
Plating
15.00 (0.625)
(0.08)
17.90 (0.70)
2.32
2.64 (0.103)
2.41 (0.096)
(c)
0.270
0.380
0.311
0.575
0.070
0.050
0.188
MIN.
MIN.
Section B - B and C - C
www.vishay.com/doc?91000
-
0.100 BSC
0.010 BSC
INCHES
Scale: None
Pad layout
11.00
(0.43)
b1, b3
(b, b2)
(4)
MAX.
0.315
0.420
0.346
0.625
0.110
0.066
0.070
0.208
MIN.
www.vishay.com
(0.15)
3.81
(0.38)
9.65
NOTES
c1
2, 3
(4)
Base
Metal
3
3
3
MIN.
MIN.
1