SUP75N08-10-E3 Vishay/Siliconix, SUP75N08-10-E3 Datasheet
SUP75N08-10-E3
Specifications of SUP75N08-10-E3
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SUP75N08-10-E3 Summary of contents
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... N-Channel 75-V (D-S), 175 C MOSFET V ( (BR)DSS DS(on) 75 0.010 TO-220AB DRAIN connected to TAB Top View SUP75N08-10 Parameter Gate-Source Voltage Continuous Drain Current ( 175 C) 175 C) J Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy Power Dissipation Power Dissipation Operating Junction and Storage Temperature Range ...
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SUP/SUB75N08-10 Vishay Siliconix Specifications ( Unless Otherwise Noted) J Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage Z Zero Gate Voltage Drain Current On-State ...
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Output Characteristics 250 200 150 100 – Drain-to-Source Voltage (V) DS Transconductance 120 T = – 100 ...
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SUP/SUB75N08-10 Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 –50 – 100 T – Junction Temperature ( C) J Maximum Avalanche and ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...