SUD50N03-10AP-E3 Vishay/Siliconix, SUD50N03-10AP-E3 Datasheet - Page 4
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SUD50N03-10AP-E3
Manufacturer Part Number
SUD50N03-10AP-E3
Description
MOSFET 30V 20A 71W
Manufacturer
Vishay/Siliconix
Datasheet
1.SUD50N03-10AP-E3.pdf
(6 pages)
Specifications of SUD50N03-10AP-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Resistance Drain-source Rds (on)
10 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Fall Time
20 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
83 W
Rise Time
90 ns
Tradename
TrenchFET
Typical Turn-off Delay Time
33 ns
SUD50N03-10
Siliconix
Typical Characteristics (25 C Unless Otherwise Noted)
Thermal Ratings
4
0.01
0.1
2
1
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
10
On-Resistance vs. Junction Temperature
–4
Duty Cycle = 0.5
V
I
0.02
0.05
D
GS
0.2
0.1
= 50 A
= 10 V
Maximum Drain Current vs.
T
T
J
A
Ambient Temperature
– Junction Temperature ( C)
– Ambient Temperature ( C)
S-57253—Rev. E, 24-Feb-98
10
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
10
–2
Square Wave Pulse Duration (sec)
Siliconix was formerly a division of TEMIC Semiconductors
Phone (408)988-8000
500
100
100
0.1
10
10
10
1
1
–1
0.1
by r
Limited
0
DS(on)
Source-Drain Diode Forward Voltage
FaxBack (408)970-5600
V
V
0.3
SD
T
DS
J
= 175 C
Single Pulse
– Source-to-Drain Voltage (V)
– Drain-to-Source Voltage (V)
Safe Operating Area
T
A
1
= 25 C
0.6
1
0.9
www.siliconix.com
T
10
J
= 25 C
1.2
10, 100 s
1 ms
10 ms
100 ms
1 s
dc
10
100
1.5
30