BUK7675-55A /T3 NXP Semiconductors, BUK7675-55A /T3 Datasheet

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BUK7675-55A /T3

Manufacturer Part Number
BUK7675-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7675-55A /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20.3 A
Resistance Drain-source Rds (on)
0.075 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
40 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
62 W
Rise Time
50 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
70 ns
Part # Aliases
BUK7675-55A,118
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
BUK7675-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 3 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V and 24 V loads
Automotive and general purpose
power switching
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive drain-source
avalanche energy
Quick reference data
Conditions
T
V
see
T
V
T
see
V
T
see
I
R
T
D
j
GS
mb
GS
j
GS
j
j(init)
GS
≥ 25 °C; T
= 175 °C; see
= 25 °C; see
= 11 A; V
Figure
Figure 12
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
sup
j
D
D
≤ 175 °C
mb
GS
= 10 A;
= 10 A;
≤ 55 V;
Figure
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
= 25 °C;
Figure
= 10 V;
Figure 2
Figure 3
11;
11;
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
64
-
Max Unit
55
20.3 A
62
150
75
30.3 mJ
V
W
mΩ
mΩ

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BUK7675-55A /T3 Summary of contents

Page 1

... BUK7675-55A N-channel TrenchMOS standard level FET Rev. 02 — 3 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... T pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7675-55A Graphic symbol mbb076 3 Version SOT404 Min Max - -20 20 Figure 1 ...

Page 3

... I DSon δ All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7675-55A N-channel TrenchMOS standard level FET 120 der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03nc12 = 10 μs ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7675-55A Product data sheet Conditions see Figure 4 mounted on printed-circuit board ; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7675-55A N-channel TrenchMOS standard level FET Min Typ - - - 50 03nc13 t p δ ...

Page 5

... ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7675-55A Min Typ Max = 25 ° -55 ° 175 ° °C; 2 ...

Page 6

... DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7675-55A N-channel TrenchMOS standard level FET 160 140 120 100 Drain-source on-state risistance as a function of gate-source voltage; typical values ...

Page 7

... Fig 10. Gate-source threshold voltage as a function of 03nc10 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7675-55A N-channel TrenchMOS standard level FET 5 V GS(th) (V) 4 max 3 typ 2 min 1 0 −60 ...

Page 8

... V (V) DS Fig 14. Reverse diode current as a function of reverse dioode voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7675-55A N-channel TrenchMOS standard level FET = 175 ° ° 0.5 1.0 1 © NXP B.V. 2011. All rights reserved. ...

Page 9

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7675-55A N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. SOT404 05-02-11 06-03- ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7675-55A separated from data sheet BUK7575_7675_55A v.1. BUK7575_7675_55A v.1 20001208 BUK7675-55A Product data sheet ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7675-55A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7675-55A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 February 2011 Document identifier: BUK7675-55A ...

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