VS-ST203C12CFJ1 Vishay Semiconductors, VS-ST203C12CFJ1 Datasheet - Page 2

• Manufacturer Part Number: VS-ST203C12CFJ1
• Description: SCR Modules 370 Amp 1200 Volt 700 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST203C12CFJ1

• Product Category: SCR Modules
• On-state Rms Current (it Rms): 700 A
• Non Repetitive On-state Current: 5260 A
• Breakover Current Ibo Max: 5510 A
• Rated Repetitive Off-state Voltage Vdrm: 1.2 kV
• Off-state Leakage Current @ Vdrm Idrm: 40 mA
• On-state Voltage: 1.72 V
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: TO-200AB (A-PUK)
• Circuit Type: SCR
• Current Rating: 370 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 12

ST203CPbF Series
Vishay High Power Products
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
2
2
t for fusing
√t for fusing
r
d
For technical questions, contact: [e-mail]
860
840
700
430
40
SYMBOL
180° el
V
V
I
I
T(RMS)
I
T(AV)
V
T(TO)1
T(TO)2
(Hockey PUK Version), 370 A
TSM
I
47/0.22
I
r
r
I
2
I
2
TM
t1
t2
H
L
V
√t
t
Inverter Grade Thyristors
50
DRM
50
750
706
580
340
55
I
TM
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
I
t
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
T
T
TM
p
J
J
= 10 ms sine wave pulse
= 25 °C, I
= 25 °C, V
= 600 A, T
T(AV)
T(AV)
1340
1400
1350
T
), T
), T
980
A
40
> 30 A
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
J
T(AV)
T(AV)
= 12 V, R
= T
J
J
180° el
TEST CONDITIONS
= T
= T
47/0.22
J
V
< I < π x I
< I < π x I
maximum,
50
DRM
J
J
-
maximum
maximum
RRM
RRM
a
= 6 Ω, I
1160
1220
1170
830
I
55
TM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
), T
), T
G
= 1 A
J
J
J
= T
= T
= T
5620
2940
1750
J
J
J
910
40
maximum
maximum
maximum
100 µs
47/0.22
V
50
DRM
-
Document Number: 94370
5020
2590
1520
780
I
55
TM
370 (140)
VALUES
55 (85)
Revision: 30-Apr-08
5260
5510
4420
4630
1380
1000
1.72
1.17
1.22
0.92
0.83
700
138
126
600
98
89
UNITS
Ω/µF
A/µs
°C
UNITS
A
V
kA
kA
mΩ
mA
°C
A
A
V
2
2
√s
s