VS-ST180S16P1PBF Vishay Semiconductors, VS-ST180S16P1PBF Datasheet - Page 6
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VS-ST180S16P1PBF
Manufacturer Part Number
VS-ST180S16P1PBF
Description
SCRs 200 Amp 1600 Volt 314 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-ST180S12P0V.pdf
(8 pages)
Specifications of VS-ST180S16P1PBF
Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
5230 A
Rated Repetitive Off-state Voltage Vdrm
1600 V
Off-state Leakage Current @ Vdrm Idrm
30 mA
Forward Voltage Drop
1.75 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
150 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-93
Factory Pack Quantity
12
ST180SPbF Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
Device code
100
0.1
10
0.001
Note: For metric device M16 x 1.5 contact factory
1
1
2
3
4
5
6
7
8
9
ST
Rec tangular gate pulse
a) Recommended load line for
b) R ec ommended load line for
1
tr<=1 µs
<=30% rated di/ dt : 10V, 10ohms
rated di/ dt : 20V, 10ohms; tr<=1 µs
-
-
-
-
-
-
-
-
-
For technical questions, contact: ind-modules@vishay.com
18
2
VGD
Thyristor
Essential part number
0 = Converter grade
S = Compression bonding stud
Voltage code x 100 = V
P = Stud base 3/4"-16UNF2A threads
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
V = Glass-metal seal (only up to 1200 V)
Lead (Pb)-free
None = Ceramic housing (over 1200 V)
0.01
IGD
LINKS TO RELATED DOCUMENTS
Phase Control Thyristors
0
3
(Stud Version), 200 A
Device: S T 180S S eries
Instantaneous Gate Current (A)
S
Fig. 9 - Gate Characteristics
4
0.1
20
(b)
5
RRM
(a)
(see Voltage Ratings table)
P
6
1
F requency Limited by PG(AV)
0
7
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
http://www.vishay.com/doc?95082
8
-
10
(1)
PbF
(2)
9
(3)
(4)
100
Document Number: 94397
Revision: 11-Aug-08