VS-ST110S12P1VPBF Vishay Semiconductors, VS-ST110S12P1VPBF Datasheet - Page 3

• Manufacturer Part Number: VS-ST110S12P1VPBF
• Description: SCRs 110 Amp 1200 Volt 175 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST110S12P1VPBF

• Product Category: SCRs
• Rohs: yes
• Mounting Style: Stud
• Package / Case: TO-94

Document Number: 94393
Revision: 17-Aug-10
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
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SYMBOL
SYMBOL
+ V
P
- V
R
R
P
T
V
V
I
G(AV)
I
I
T
thCS
GM
thJC
GD
GT
Stg
GM
GT
GD
GM
J
GM
Phase Control Thyristors
(Stud Version), 110 A
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
See dimensions - link at the end of datasheet
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= T
J
J
J
J
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
TEST CONDITIONS
TEST CONDITIONS
p
p
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
 5 ms
 5 ms
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DRM
Vishay Semiconductors
anode to
ST110SPbF Series
- 40 to 125
- 40 to 150
15.5 (137)
TYP.
VALUES
180
14 (120)
2.9
1.8
1.2
40
90
0.195
0.08
TO-209AC (TO-94)
VALUES
130
0.25
2.0
5.0
20
10
5
1
MAX.
150
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3.0
-
-
-
-
(lbf · in)
UNITS
K/W
Nm
°C
UNITS
g
mA
mA
W
A
V
V
V
3