VS-16TTS12FPPBF Vishay Semiconductors, VS-16TTS12FPPBF Datasheet - Page 4

• Manufacturer Part Number: VS-16TTS12FPPBF
• Description: SCRs 1200 Volt 16 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-16TTS12FPPBF

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 200 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: Through Hole
• Package / Case: TO-220

Revision: 10-Nov-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
180
160
140
120
100
80
1
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16T T S ..FP S eries
At Any Rated Load Condition And With
Rated V
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
R RM
0.1
10
0.0001
1
VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series
Applied Following S urge.
10
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 125°C
Fig. 8 - Thermal Impedance Z
0.001
J
1000
100
Fig. 7 - On-State Voltage Drop Characteristics
10
S ingle Pulse
1
0
100
Instantaneous On-state Voltage (V)
16T T S ..FP S eries
S quare Wave Pulse Duration (s)
1
0.01
4
2
T = 25°C
T = 125°C
J
J
thJC
3
Characteristics
0.1
Fig. 6 - Maximum Non-Repetitive Surge Current
4
200
180
160
140
120
100
www.vishay.com/doc?91000
80
0.01
16T T S ..FP S eries
16T T S ..F P S eries
Maximum Non R epetitive S urge Current
5
S teady S tate Value
(DC Operation)
1
Vishay Semiconductors
Pulse T rain Duration (s)
Versus Pulse T rain Duration.
[e-mail]
No Vo ltag e Reapp lied
Rated V
0.1
10
Document Number: 94381
Initial T = 125°C
R RM
Reapp lied
J
1