SI1563DH-T1 Vishay/Siliconix, SI1563DH-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1563DH-T1
• Description: MOSFET 20V 1.28/1.0A 0.48W
• Manufacturer: Vishay/Siliconix

Specifications of SI1563DH-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.13 A, 0.88 A
• Resistance Drain-source Rds (on): 0.28 Ohms, 0.49 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 22 ns at N Channel, 25 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 570 mW
• Rise Time: 22 ns at N Channel, 25 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 ns at N Channel, 15 ns at P Channel

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71963
S10-1054-Rev. B, 03-May-10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
0.0
0.0
0
V
I
V
D
DS
GS
= 1.28 A
On-Resistance vs. Drain Current
= 10 V
= 1.8 V
0.3
V
0.5
V
DS
1
Output Characteristics
Q
GS
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
= 5 V thru 2 V
D
Gate Charge
- Drain Current (A)
0.6
1.0
2
0.9
1.5
V
V
3
GS
GS
1.2
= 2.5 V
= 4.5 V
1 V
1.5 V
2.0
1.5
4
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
160
120
80
40
0.0
0
- 50
0
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
rss
GS
= 1.13 A
= 4.5 V
4
V
0.5
V
GS
Transfer Characteristics
0
DS
T
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
C
- Drain-to-Source Voltage (V)
oss
25
Capacitance
8
1.0
50
Vishay Siliconix
T
C
25 °C
12
75
= - 55 °C
Si1563DH
C
iss
www.vishay.com
1.5
100
16
125 °C
125
2.0
150
20
3