SI1563DH-T1 Vishay/Siliconix, SI1563DH-T1 Datasheet - Page 6

• Manufacturer Part Number: SI1563DH-T1
• Description: MOSFET 20V 1.28/1.0A 0.48W
• Manufacturer: Vishay/Siliconix

Specifications of SI1563DH-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.13 A, 0.88 A
• Resistance Drain-source Rds (on): 0.28 Ohms, 0.49 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 22 ns at N Channel, 25 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 570 mW
• Rise Time: 22 ns at N Channel, 25 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 ns at N Channel, 15 ns at P Channel

Si1563DH
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
1.6
1.2
0.8
0.4
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
0.0
0.0
0
V
thru 3.5 V
GS
= 5 V
V
I
D
DS
0.5
On-Resistance vs. Drain Current
= 0.9 A
0.3
= 10 V
V
DS
1
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
V
1.0
GS
I
- Total Gate Charge (nC)
D
GS
- Drain Current (A)
Gate Charge
= 1.8 V
0.6
= 2.5 V
1.5
2
0.9
2.0
3
V
GS
1.2
2.5
= 4.5 V
1.5 V
2.5 V
2 V
1 V
3 V
3.0
1.5
4
160
120
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
80
40
0
- 50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
0.5
= 0.88 A
2
= 4.5 V
V
V
GS
DS
Transfer Characteristics
0
T
1.0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
4
25
Capacitance
C
C
1.5
oss
iss
S10-1054-Rev. B, 03-May-10
50
6
T
Document Number: 71963
C
2.0
25 °C
= - 55 °C
75
8
2.5
100
125 °C
10
3.0
125
150
3.5
12