SI1563DH-T1 Vishay/Siliconix, SI1563DH-T1 Datasheet - Page 7

• Manufacturer Part Number: SI1563DH-T1
• Description: MOSFET 20V 1.28/1.0A 0.48W
• Manufacturer: Vishay/Siliconix

Specifications of SI1563DH-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.13 A, 0.88 A
• Resistance Drain-source Rds (on): 0.28 Ohms, 0.49 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 22 ns at N Channel, 25 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 570 mW
• Rise Time: 22 ns at N Channel, 25 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 25 ns at N Channel, 15 ns at P Channel

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71963
S10-1054-Rev. B, 03-May-10
- 0.05
- 0.10
- 0.15
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.1
2
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
T
0.6
50
J
= 150 °C
I
D
75
= 100 µA
0.8
0.01
T
0.1
10
J
100
1
0.1
= 25 °C
Limited by R
1.0
* V
Safe Operating Area, Junction-to-Ambient
125
GS
Single Pulse
T
A
> minimum V
Limited
V
= 25 °C
DS(on)
I
1.2
150
D(on)
DS
- Drain-to-Source Voltage (V)
*
1
GS
BVDSS Limited
at which R
I
DM
10
DS(on)
Limited
1.6
1.2
0.8
0.4
0.0
0.01
5
4
3
2
1
0
is specified
0
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
= 0.88 A
0.1
100
1
V
GS
- Gate-to-Source Voltage (V)
2
1
Time (s)
Vishay Siliconix
3
10
Si1563DH
www.vishay.com
4
100
600
5
7