BS250 SB36890\E6 Vishay Semiconductors, BS250 SB36890\E6 Datasheet - Page 3

• Manufacturer Part Number: BS250 SB36890\E6
• Description: MOSFET P-Channel 60V 0.25A
• Manufacturer: Vishay Semiconductors

Specifications of BS250 SB36890\E6

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 45 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 0.18 A
• Resistance Drain-source Rds (on): 14 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-92
• Power Dissipation: 0.83 W
• Factory Pack Quantity: 20000

Document Number: 70209
S-41260—Rev. H, 05-Jul-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.0
0.8
0.6
0.4
0.2
0.0
15
12
20
16
12
9
6
3
0
8
4
0
0.0
0
0
I
D
On-Resistance vs. Drain Current
0.3
= 500 mA
200
1
V
DS
Q
Output Characteristics
g
I
D
− Drain-to-Source Voltage (V)
0.6
− Total Gate Charge (nC)
V
8 V
− Drain Current (mA)
GS
V
Gate Charge
400
GS
2
V
= 4.5 V
DS
V
= 5 V
GS
0.9
= 30 V
= 10 V
600
3
V
GS
1.2
= 10 V
V
800
DS
4
1.5
= 48 V
5 V
4 V
7 V
6 V
1000
1.8
5
TP0610L/T, VP0610L/T, BS250
1200
900
600
300
1.8
1.5
1.2
0.9
0.6
0.3
0.0
40
32
24
16
0
8
0
−50
0
0
On-Resistance vs. Junction Temperature
−25
V
V
GS
2
V
5
GS
T
GS
V
Transfer Characteristics
J
DS
0
= 10 V @ 500 mA
− Gate-to-Source Voltage (V)
= 0 V
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
25
Capacitance
10
4
Vishay Siliconix
T
J
50
= −55_C
V
GS
C
15
C
C
6
oss
75
iss
rss
= 4.5 V @ 25 mA
100
125_C
www.vishay.com
20
8
25_C
125
150
10
25
3