VN2210N3-P013 Supertex, VN2210N3-P013 Datasheet - Page 4
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VN2210N3-P013
Manufacturer Part Number
VN2210N3-P013
Description
MOSFET 100V 0.35Ohm
Manufacturer
Supertex
Datasheet
1.VN2210N3-P014-G.pdf
(5 pages)
Specifications of VN2210N3-P013
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.3 A
Resistance Drain-source Rds (on)
4 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
50 ns
Typical Performance Curves
1.1
1.0
0.9
2.0
1.6
1.2
0.8
0.4
50
25
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
2
Transfer Characteristics
= 25V
10
0
Variation with Temperature
f = 1MHz
V
C
C
V
GS
4
RSS
ISS
DS
T
(volts)
j
50
20
(volts)
(°C)
●
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
30
8
(cont.)
150
10
40
4
1.4
1.2
1.0
0.8
0.6
10
10
8
6
4
2
0
8
6
4
2
0
V
-50
GS(th)
0
0
●
Gate Drive Dynamic Characteristics
Tel: 408-222-8888
On-Resistance vs. Drain Current
and R
V
30 pF
V
DS
0.5
0.2
GS
= 10V
0
DS(ON)
= 5V
Q
R
G
I
DS(ON)
D
(nanocoulombs)
1.0
0.4
90 pF
(amperes)
Variation with Temperature
T
j
50
(°C)
@ 10V, 0.5A
V
●
V
GS(th)
1.5
0.6
GS
www.supertex.com
= 10V
V
@ 1mA
DS
100
2.0
0.8
= 40V
150
2.5
1.0
2.0
1.6
1.2
0.8
0.4
0
VN2106