IS61WV6416BLL-12BLI ISSI, Integrated Silicon Solution Inc, IS61WV6416BLL-12BLI Datasheet

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IS61WV6416BLL-12BLI

Manufacturer Part Number
IS61WV6416BLL-12BLI
Description
IC SRAM 1MBIT 12NS 48MBGA
Manufacturer
ISSI, Integrated Silicon Solution Inc

Specifications of IS61WV6416BLL-12BLI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (64K x 16)
Speed
12ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-MBGA
Density
1Mb
Access Time (max)
12ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
16b
Package Type
Mini BGA
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
45mA
Operating Supply Voltage (min)
2.97V
Operating Supply Voltage (max)
3.63V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
48
Word Size
16b
Number Of Words
64K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61WV6416BLL-12BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS61WV6416BLL-12BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
FUNCTIONAL BLOCK DIAGRAM
IS61WV3216BLL
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. B
07/22/09
FEATURES
• High-speed access time:
• CMOS low power operation:
• TTL compatible interface levels
• Fully static operation: no clock or refresh
• Three state outputs
• Data control for upper and lower bytes
• Automotive Temperature Available
• Lead-free available
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
32K x 16 HIGH-SPEED CMOS STATIC RAM
12 ns: 3.3V + 10%
15 ns: 2.5V-3.6V
50 mW (typical) operating
25 µW (typical) standby
required
Lower Byte
Upper Byte
I/O8-I/O15
I/O0-I/O7
A0-A14
V
GND
DD
WE
CE
OE
UB
LB
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
1-800-379-4774
DESCRIPTION
The
static RAM organized as 32,768 words by 16 bits. It
is fabricated using
technology. This highly reliable process coupled with in-
novative circuit design techniques, yields access times as
fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low
power consumption.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61/64WV3216BLL is packaged in the JEDEC
standard 44-pin TSOP-II, and 48-pin mini BGA (6mm x
8mm).
MEMORY ARRAY
ISSI
COLUMN I/O
32K x 16
IS61/64WV3216BLL is a high-speed, 524,288-bit
ISSI
's high-performance CMOS
JULY 2009
1

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IS61WV6416BLL-12BLI Summary of contents

Page 1

... Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61/64WV3216BLL is packaged in the JEDEC standard 44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm) ...

Page 2

IS64WV3216BLL IS61WV3216BLL PIN CONFIGURATIONS 48-Pin mini BGA (6mm x 8mm I I/O I GND I ...

Page 3

IS64WV3216BLL IS61WV3216BLL TRUTH TABLE Mode WE CE Not Selected X Output Disabled H X Read Write ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND term t Storage Temperature stg P ...

Page 4

IS64WV3216BLL IS61WV3216BLL DC ELECTRICAL CHARACTERISTICS V = 2.5V-3.6V dd Symbol Parameter V Output HIGH Voltage oH V Output LOW Voltage oL V Input HIGH Voltage IH V Input LOW Voltage ( Input Leakage LI I Output Leakage Lo ...

Page 5

IS64WV3216BLL IS61WV3216BLL POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions I V Dynamic Operating V = Max Supply Current mA out I Operating Supply V = Max Current Iout ...

Page 6

IS64WV3216BLL IS61WV3216BLL AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (V ) Ref Output Load AC TEST LOADS Zo=50Ω OUTPUT Figure 1a. 6 Unit (2.5V-3.6V) (3.3V + 10%) 0V ...

Page 7

IS64WV3216BLL IS61WV3216BLL READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time rc t Address Access Time AA t Output Hold Time oHA t CE Access Time Ace t OE Access Time doe High-Z Output (2) Hzoe ...

Page 8

IS64WV3216BLL IS61WV3216BLL AC WAVEFORMS READ CYCLE NO. 1 (Address Controlled) ( (1,2) ADDRESS D OUT PREVIOUS DATA VALID READ CYCLE NO. 2 (1,3) ADDRESS LZCE LB LZB HIGH-Z D OUT Notes: ...

Page 9

IS64WV3216BLL IS61WV3216BLL WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time Write End sce t Address Setup Time Aw to Write End t Address Hold from Write End HA t Address Setup Time sA t ...

Page 10

IS64WV3216BLL IS61WV3216BLL WRITE CYCLE NO. 1 (CE Controlled HIGH or LOW) (1,2) ADDRESS UB DATA UNDEFINED OUT VALID ADDRESS t SCE PWE1 t PWE2 ...

Page 11

IS64WV3216BLL IS61WV3216BLL WRITE CYCLE NO. 2 (1) (WE Controlled HIgH during Write Cycle) ADDRESS OE CE LOW UB DATA UNDEFINED OUT D IN WRITE CYCLE NO. 3 (WE Controlled LOW During ...

Page 12

IS64WV3216BLL IS61WV3216BLL WRITE CYCLE NO. 4 (LB, UB Controlled, Back-to-Back Write) ADDRESS OE CE LOW WE UB HZWE D OUT DATA UNDEFINED D IN Notes: 1. The internal Write time is defined by the overlap ...

Page 13

IS64WV3216BLL IS61WV3216BLL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current dr t Data Retention Setup Time sdr t Recovery Time rdr Note: 1. Typical values are measured 2.5V, ...

Page 14

IS64WV3216BLL IS61WV3216BLL ORDERING INFORMATION Industrial Temperature Range: –40°C to +85°C Speed (ns) Order Part No. 12 IS61WV3216BLL-12TI 12 IS61WV3216BLL-12TLI 12 IS61WV3216BLL-12BI 12 IS61WV3216BLL-12BLI Temperature Range (A3): –40°C to +125°C Speed (ns) Order Part No. 15 (12*) IS64WV3216BLL-15TA3 15 (12*) IS64WV3216BLL-15TLA3 ...

Page 15

IS64WV3216BLL IS61WV3216BLL Integrated Silicon Solution, Inc. — www.issi.com — Rev. B 07/22/09 1-800-379-4774 15 ...

Page 16

IS64WV3216BLL IS61WV3216BLL 16 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 07/22/09 ...

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