IS62WV12816BLL-55BLI-TR ISSI, Integrated Silicon Solution Inc, IS62WV12816BLL-55BLI-TR Datasheet - Page 7

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IS62WV12816BLL-55BLI-TR

Manufacturer Part Number
IS62WV12816BLL-55BLI-TR
Description
IC SRAM 2MBIT 55NS 48MBGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS62WV12816BLL-55BLI-TR

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
2M (128K x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-MBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS62WV12816BLL-55BLI-TR
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS62WV12816BLL-55BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS62WV12816ALL,
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4 to 1.4V and
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. H
01/13/2010
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
output loading specified in Figure 1.
HZB
RC
AA
OHA
ACS1/
DOE
HZOE
LZOE
HZCS1/
LZCS1/
BA
LZB
(2)
(2)
t
ACS2
t
t
LZCS2
HZCS2
(2)
(2)
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CS1/CS2 Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CS1/CS2 to High-Z Output
CS1/CS2 to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
IS62WV12816BLL
Min.
45
10
10
5
0
0
0
45 ns
1-800-379-4774
Max.
45
45
20
15
15
45
15
(1)
(Over Operating Range)
Min.
55
10
10
5
0
0
0
55 ns
Max.
55
55
25
20
20
55
20
Min.
70
10
10
5
0
0
0
70 ns
Max.
70
70
35
25
25
70
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7

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