IS42S16100E-5TL ISSI, Integrated Silicon Solution Inc, IS42S16100E-5TL Datasheet - Page 27
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IS42S16100E-5TL
Manufacturer Part Number
IS42S16100E-5TL
Description
IC SDRAM 16MBIT 200MHZ 50TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS42S16100E-7TL.pdf
(81 pages)
Specifications of IS42S16100E-5TL
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
16M (1M x 16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
50-TSOPII
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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- Download datasheet (2Mb)
IS42S16100E, IC42S16100E
Write With Auto-Precharge
The write with auto-precharge command first executes a
burst write operation and then puts the selected bank in
the precharged state automatically. After the precharge
completes the bank goes to the idle state. Thus this
command performs a write command and a precharge
command in a single operation.
During this operation, the delay period (t
last burst data input and the completion of the precharge
operation differs depending on the CAS latency setting.
The delay (t
precharge operation starts one clock period after the last
burst data input.
CAS latency = 2, burstlength = 4
CAS latency = 3, burstlength = 4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
01/22/08
COMMAND
COMMAND
CLK
CLK
DQ
DQ
dal
WRITE WITH AUTO-PRECHARGE
WRITE WITH AUTO-PRECHARGE
) is t
rp
WRITE A0
WRITE A0
D
D
plus one CLK period. That is, the
IN
IN
(BANK 0)
(BANK 0)
0
0
D
D
IN
IN
1
1
dal
) between the
D
D
IN
IN
2
2
D
D
IN
IN
3
3
Therefore, the selected bank can be made active after a
delay of t
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length
is set to full page.
CAS Latency
PRECHARGE START
PRECHARGE START
dal
t
dal
t
t
.
DAL
RP
t
t
DAL
ACT 0
RP
2CLK
+t
3
rp
2CLK
+t
ACT 0
2
rp
27
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