IS61WV25616BLL-10BLI-TR ISSI, Integrated Silicon Solution Inc, IS61WV25616BLL-10BLI-TR Datasheet - Page 6

• Manufacturer Part Number: IS61WV25616BLL-10BLI-TR
• Description: IC SRAM 4MBIT 10NS 48MBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61WV25616BLL-10BLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-MBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
6
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
Symbol
C
C
Symbol
V
V
T
P
to the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
STG
IN
TERM
DD
T
I/O
Parameter
Terminal Voltage with Respect to GND
V
Storage Temperature
Power Dissipation
DD
Parameter
Input Capacitance
Input/Output Capacitance
Relates to GND
A
(1,2)
= 25°C, f = 1 MHz, V
DD
= 3.3V.
(1)
Conditions
V
V
OUT
IN
= 0V
= 0V
–0.5 to V
–65 to +150
–0.3 to 4.0
Value
1.0
DD
Integrated Silicon Solution, Inc. — www.issi.com
+ 0.5
Max.
6
8
Unit
°C
W
V
V
Unit
pF
pF
07/15/2010
Rev. G